Electroluminescent device comprising porous silicon
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Accused Products
Abstract
An electroluminescent device comprises a porous silicon region adjacent a bulk silicon region, together with a top electrical contact of transparent indium tin oxide and a bottom electrical contact of aluminium. The device includes a heavily doped region to provide an ohmic contact. The porous silicon region is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device has a rectifying p-n junction within the porous silicon region.
9 Citations
24 Claims
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1-23. -23. (canceled)
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24. P-type porous silicon, wherein the porous silicon has a porosity greater than 30%.
Specification
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Current AssigneePamera Management Company LLC (Intellectual Ventures LLC)
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Original AssigneeQinetiq Limited (QinetiQ Group PLC)
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InventorsCanham, Leigh, Blacker, Richard, Loni, Armando, Cox, Timothy, Simons, Andrew
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Application NumberUS11/455,932Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current438/22CPC Class CodesH01L 33/346 containing porous silicon
