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Method for fabricating semiconductor device

  • US 20070004105A1
  • Filed: 12/29/2005
  • Published: 01/04/2007
  • Est. Priority Date: 06/30/2005
  • Status: Abandoned Application
First Claim
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1. A method for fabricating a semiconductor device, comprising:

  • forming a gate insulation layer on a substrate;

    forming a gate electrode on the gate insulation layer, wherein the gate electrode includes a pattern of a poly-silicon layer and a silicide layer on which a hard mask layer is superposed;

    recessing the silicide layer in a horizontal direction; and

    forming a thermal oxide layer on exposed portions of the substrate, the poly-silicon layer, and the silicide layer.

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