Method for fabricating semiconductor device

• US 20070004105A1
• Filed: 12/29/2005
• Published: 01/04/2007
• Est. Priority Date: 06/30/2005
• Status: Abandoned Application

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Nam, Ki-Won
• Application Number:
  US11/323,524
• Publication Number:
  US 20070004105A1
• Time in Patent Office: Days
• US Class Current: 438/152
• CPC Class Codes: H01L 21/28061 the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction H01L21/28052 takes precedence
• CPC Class Codes: H01L 21/28114 characterised by the sectional shape, e.g. T, inverted-T
• CPC Class Codes: H01L 21/823456 gate conductors with different shapes, lengths or dimensions
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers

Abstract

A method for fabricating a semiconductor device is provided. The method includes: forming a gate insulation layer on a substrate; forming a gate electrode on the gate insulation layer, wherein the gate electrode includes a pattern of a poly-silicon layer and a silicide layer on which a hard mask layer is superposed; recessing the silicide layer in a horizontal direction; and forming a thermal oxide layer on exposed portions of the substrate, the poly-silicon layer, and the silicide layer.

Claims

1. A method for fabricating a semiconductor device, comprising:

forming a gate insulation layer on a substrate;

forming a gate electrode on the gate insulation layer, wherein the gate electrode includes a pattern of a poly-silicon layer and a silicide layer on which a hard mask layer is superposed;

recessing the silicide layer in a horizontal direction; and

forming a thermal oxide layer on exposed portions of the substrate, the poly-silicon layer, and the silicide layer.

2. The method of claim 1, wherein the recessing of the silicide layer in the horizontal direction is performed by employing a mixed solution of ammonium hydroxide (NH₃OH), hydrogen peroxide (H₂O₂), and water (H₂O).

3. The method of claim 2, wherein a ratio of H₂O to NH₃OH is greater than that of H₂O₂ to NH₃OH.

4. The method of claim 3, wherein the minimum ratio of H₂O to NH₃OH is at least twice the maximum ratio of H₂O₂ to NH₃OH.

5. The method of claim 4, wherein the ratio of H₂O₂ to NH₃OH is in a range of approximately 2 to 5:

1.

6. The method of claim 4, wherein the ratio of H₂O to NH₃OH is in a range of approximately 10 to 30:

1.

7. The method of claim 1, wherein a recessing rate of the silicide layer ranges from approximately 10 Å

to approximately 20 Å

per minute.

8. A method for fabricating a semiconductor device, comprising:

forming a gate insulation layer on a substrate;

forming a gate electrode on the gate insulation layer, wherein the gate electrode includes a pattern of a poly-silicon layer and a silicide layer on which a hard mask layer is superposed;

recessing the silicide layer in a horizontal direction;

forming a thermal oxide layer on exposed portions of the substrate, the poly-silicon layer, and the silicide layer; and

forming an anti-reflective coating layer on the hard mask layer.

9. The method of claim 8, wherein the recessing of the silicide layer in the horizontal direction is performed by employing a mixed solution of ammonium hydroxide (NH₃OH), hydrogen peroxide (H₂O₂), and water (H₂O).

10. The method of claim 9, wherein a ratio of H₂O to NH₃OH is greater than that of H₂O₂ to NH₃OH.

11. The method of claim 10, wherein the minimum ratio of H₂O to NH₃OH is at least twice the maximum ratio of H₂O₂ to NH₃OH.

12. The method of claim 11, wherein the ratio of H₂O₂ to NH₃OH is in a range of approximately 2 to 5:

1.

13. The method of claim 11, wherein the ratio of H₂O to NH₃OH is in a range of approximately 10 to 30:

1.

14. The method of claim 8, wherein a recessing rate of the silicide layer ranges from approximately 10 Å

to approximately 20 Å

per minute.