Method for fabricating semiconductor device
First Claim
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1. A method for fabricating a semiconductor device, comprising:
- forming a gate insulation layer on a substrate;
forming a gate electrode on the gate insulation layer, wherein the gate electrode includes a pattern of a poly-silicon layer and a silicide layer on which a hard mask layer is superposed;
recessing the silicide layer in a horizontal direction; and
forming a thermal oxide layer on exposed portions of the substrate, the poly-silicon layer, and the silicide layer.
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Abstract
A method for fabricating a semiconductor device is provided. The method includes: forming a gate insulation layer on a substrate; forming a gate electrode on the gate insulation layer, wherein the gate electrode includes a pattern of a poly-silicon layer and a silicide layer on which a hard mask layer is superposed; recessing the silicide layer in a horizontal direction; and forming a thermal oxide layer on exposed portions of the substrate, the poly-silicon layer, and the silicide layer.
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Citations
14 Claims
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1. A method for fabricating a semiconductor device, comprising:
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forming a gate insulation layer on a substrate;
forming a gate electrode on the gate insulation layer, wherein the gate electrode includes a pattern of a poly-silicon layer and a silicide layer on which a hard mask layer is superposed;
recessing the silicide layer in a horizontal direction; and
forming a thermal oxide layer on exposed portions of the substrate, the poly-silicon layer, and the silicide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fabricating a semiconductor device, comprising:
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forming a gate insulation layer on a substrate;
forming a gate electrode on the gate insulation layer, wherein the gate electrode includes a pattern of a poly-silicon layer and a silicide layer on which a hard mask layer is superposed;
recessing the silicide layer in a horizontal direction;
forming a thermal oxide layer on exposed portions of the substrate, the poly-silicon layer, and the silicide layer; and
forming an anti-reflective coating layer on the hard mask layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification