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SEMICONDUCTOR DEVICE HAVING FINFET AND METHOD OF FABRICATING THE SAME

  • US 20070004129A1
  • Filed: 06/29/2006
  • Published: 01/04/2007
  • Est. Priority Date: 06/30/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a plurality of fin-shaped active regions defined by a trench formed in a semiconductor substrate;

    an isolation layer formed inside the trench, the isolation layer comprising a first insulating material;

    a plurality of word lines formed on the isolation layer inside the trench, the plurality of word lines each covering a sidewall of the active region inside the trench;

    a gate insulating layer formed between the active region and the word line; and

    a separation layer formed between two adjacent word lines inside the trench, the separation layer comprising a second insulating material having an etch selectivity with respect to the first insulating material.

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