METHOD OF THINNING A WAFER

• US 20070004172A1
• Filed: 10/20/2005
• Published: 01/04/2007
• Est. Priority Date: 07/01/2005
• Status: Abandoned Application

• Current Assignee: TOUCH MICRO-SYSTEM TECHNOLOGY CORP. (Walsin Lihwa Corporation)
• Original Assignee: TOUCH MICRO-SYSTEM TECHNOLOGY CORP. (Walsin Lihwa Corporation)
• Inventors: Yang, Chen-Hsiung
• Application Number:
  US11/163,505
• Publication Number:
  US 20070004172A1
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence

Abstract

A method of thinning a wafer. A wafer having a front surface and a back surface is provided. Subsequently, a carrier wafer is provided, and the back surface of the wafer is bonded to the carrier wafer with a bonding medium. Following that, a wafer thinning process is performed to thin the wafer from the front surface. Finally, the bonding medium is removed so as to separate the wafer from the carrier wafer.

Claims

1. A method of thinning a wafer comprising:

providing a wafer having a front surface and a back surface;

providing a carrier wafer;

bonding the back surface of the wafer to the carrier wafer with a bonding medium;

performing a wafer thinning process to thin the wafer from the front surface; and

removing the bonding medium to separate the wafer from the carrier wafer.

2. The method of claim 1, wherein the bonding medium comprises a thermal release tape, an UV tape, a photoresist, a wax or a blue tape.

3. The method of claim 1, wherein the wafer thinning process is a dry etching process.

4. The method of claim 3, wherein the dry etching process is a plasma etching process.

5. The method of claim 1, wherein the wafer thinning process is a wet etching process.

6. The method of claim 1, further comprising forming a plurality of devices on the front surface of the wafer subsequent to the wafer thinning process.

7. The method of claim 1, further comprising performing a primary wafer thinning process prior to bonding the wafer to the carrier wafer.

8. The method of claim 7, wherein the wafer has a thickness of greater than 100 micrometers after the primary wafer thinning process.

9. The method of claim 1, wherein the wafer has a thickness of less than 100 micrometers after the wafer thinning process.

10. The method of claim 1, wherein the carrier wafer is used to fasten and deliver the wafer.

11. A method of thinning a wafer comprising:

providing a wafer having a front surface and a back surface;

performing a primary wafer thinning process;

providing a carrier wafer;

bonding the back surface of the wafer to the carrier wafer with a bonding medium;

performing a wafer thinning process to thin the wafer from the front surface; and

removing the bonding medium to separate the wafer from the carrier wafer.

12. The method of claim 11, wherein the bonding medium comprises a thermal release tape, an UV tape, a photoresist, a wax or a blue tape.

13. The method of claim 11, wherein the wafer thinning process is a dry etching process.

14. The method of claim 13, wherein the dry etching process is a plasma etching process.

15. The method of claim 11, wherein the wafer thinning process is a wet etching process.

16. The method of claim 11, further comprising forming a plurality of devices on the front surface of the wafer subsequent to the wafer thinning process.

17. The method of claim 11, wherein the wafer has a thickness of greater than 100 micrometers after the primary wafer thinning process.

18. The method of claim 11, wherein the wafer has a thickness of less than 100 micrometers after the wafer thinning process.