Film forming method

• US 20070004186A1
• Filed: 09/05/2006
• Published: 01/04/2007
• Est. Priority Date: 03/03/2004
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kojima, Yasuhiko, Yoshii, Naoki
• Application Number:
  US11/514,919
• Publication Number:
  US 20070004186A1
• Time in Patent Office: Days
• US Class Current: 438/584
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/515 using pulsed discharges
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers

Abstract

A film forming method is provided for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas. At least a part of the film forming material is dissociated or decomposed in vapor phase by plasma and supplied onto the substrate.

Claims

1. A film forming method for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas, wherein at least a part of the film forming material is dissociated or decomposed in gaseous state by a plasma and is supplied onto the substrate.

2. The film forming method of claim 1, wherein the reducing gas is converted into the plasma when the reducing gas is supplied onto the substrate.

3. The film forming method of claim 1, wherein the plasma for dissociating or decomposing at least a part of the film forming material is a plasma of an inert gas.

4. The film forming method of claim 1, wherein, after the film forming material is supplied onto the substrate, and after the reducing gas is supplied onto the substrate, the surplus film forming material and the reducing gas are removed from a top surface of the substrate.

5. The film forming method of claim 1, wherein the film forming material includes one or more materials selected from the group consisting of TiCl₄, TiF₄, TiBr₄, TiI₄, Ti[N(C₂H₅CH₃)]₄ (TEMAT), Ti[N(CH₃)₂]₄ (TDMAT) and Ti[N(C₂H₅)₂]₄ (TDEAT), and the reducing gas includes one or more gases selected from the group consisting of H₂, NH₃, N₂H₄, NH(CH₃)₂, N₂H₃CH₃ and N₂, to form a Ti film or a TiN film on the substrate.

6. The film forming method of claim 1, wherein the film forming material includes at least one material of WF₆ and W(CO)₆, and the reducing gas includes one or more gases selected from the group consisting of H₂, NH₃, N₂H₄, NH(CH₃)₂, N₂H₃CH₃ and N₂, to form a W film or a WN film on the substrate.

7. The film forming method of claim 1, wherein the film forming material includes one or more materials selected from the group consisting of TaCl₅, TaF₅, TaBr₅, TaI₅, Ta(NC(CH₃)₃), (N(C₂H₅)₂)₃(TBTDET) and Ta(NC(CH₃)₂C₂H₅) (N(CH₃)₂)₃, and the reducing gas includes one or more gases selected from the group consisting of H₂, NH₃, N₂H₄, NH(CH₃)₂, N₂H₃CH₃ and N₂, to form any one of a Ta film, a TaN film or a TaCN film on the substrate.

8. A film forming method for forming a thin film including a metal on a substrate in a processing chamber, comprising the steps of;

(a) supplying a film forming material including the metal to the substrate;

(b) removing a residual gas in the processing chamber after the supply of the film forming material is stopped;

(c) supplying a reducing gas to the substrate in the processing chamber; and

(d) removing a residual gas in the processing chamber after the supply of the reducing gas is stopped,

wherein the thin film is formed by repeatedly performing the steps (a) to (d),

and, in the step (a), at least a part of the film forming material is dissociated or decomposed in gaseous state by a plasma and supplied onto the substrate.

9. The film forming method of claim 8, wherein, in the step (c), the reducing gas is converted into the plasma when the reducing gas is supplied onto the substrate.

10. The film forming method of claim 8, wherein, in the step (a), the plasma for dissociating or decomposing at least a part of the film forming material is a plasma of an inert gas.

11. The film forming method of claim 8, wherein, in the step (b) and the step (d), an atmosphere in the processing chamber is replaced with an inert gas, or the inside of the processing chamber is exhausted to a vacuum.

12. The film forming method of claim 8, wherein the film forming material includes one or more materials selected from the group consisting of TiCl₄, TiF₄, TiBr₄, TiI₄, Ti[N(C₂H₅CH₃)]₄ (TEMAT), Ti[N(CH₃)₂]₄ (TDMAT) and Ti[N(C₂H₅)₂]₄ (TDEAT), and the reducing gas includes one or more gases selected from the group consisting of H₂, NH₃, N₂H₄, NH(CH₃)₂, N₂H₃CH₃ and N₂, to form a Ti film or a TiN film on the substrate.

13. The film forming method of claim 8, wherein the film forming material includes at least one or more materials of WF₆ and W(CO)₆, and the reducing gas includes one or more gases selected from the group consisting of H₂, NH₃, N₂H₄, NH(CH₃)₂, N₂H₃CH₃ and N₂, to form a W film or a WN film on the substrate.

14. The film forming method of claim 8, wherein the film forming material includes one or more materials selected from the group consisting of TaCl₅, TaF₅, TaBr₅, TaI₅, Ta(NC(CH₃)₃), (N(C₂H₅)₂)₃ (TBTDET) and Ta(NC(CH₃)₂C₂H₅) (N(CH₃)₂)₃, and the reducing gas includes one or more gases selected from the group consisting of H₂, NH₃, N₂H₄, NH(CH₃)₂, N₂H₃CH₃ and N₂, to form any one of a Ta film, a TaN film or a TaCN film on the substrate.

15. A computer storage medium storing a software executable by a computer system, wherein, when a thin film including a metal is formed on a substrate by repeating the following steps of;

(a) supplying a film forming material including the metal to the substrate in a processing chamber;

(b) removing a residual gas in the processing chamber after a supply of the film forming material is stopped;

(c) supplying a reducing gas to the substrate in the processing chamber; and

(d) removing a residual gas in the processing chamber after the supply of the reducing gas is stopped,

the software controls a gas plasma in the processing chamber so that at least a part of the film forming material is dissociated or decomposed in gaseous state by the plasma and supplied onto the substrate in the step (a).