Semiconductor device and manufacturing method of the same
First Claim
1. A manufacturing method of a semiconductor device, comprising the steps of:
- selectively forming a material including an amino group over a substrate by discharging a composition including the material including an amino group;
immersing the material including an amino group in a solution including a plating catalyst material so as to form the plating catalyst material over the material including an amino group; and
immersing the plating catalyst material in a plating solution including a metal material so as to form a metal film over a surface of the material including an amino group.
1 Assignment
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Accused Products
Abstract
The manufacturing method of the present invention includes steps of selectively forming a photocatalyst material or a material including an amino group by discharging a composition including the photocatalyst material or the material including an amino group; immersing the photocatalyst material or the material including an amino group in a solution including a plating catalyst material so as to adsorb or deposit the plating catalyst material onto the photocatalyst material or the material including an amino group; and immersing the plating catalyst material in a plating solution including a metal material so as to form a metal film on a surface of the photocatalyst material or the material including an amino group adsorbing or depositing the plating catalyst material, thereby manufacturing a semiconductor device. The pH of the solution including the plating catalyst material is adjusted in a range of 3 to 6.
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Citations
28 Claims
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1. A manufacturing method of a semiconductor device, comprising the steps of:
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selectively forming a material including an amino group over a substrate by discharging a composition including the material including an amino group;
immersing the material including an amino group in a solution including a plating catalyst material so as to form the plating catalyst material over the material including an amino group; and
immersing the plating catalyst material in a plating solution including a metal material so as to form a metal film over a surface of the material including an amino group. - View Dependent Claims (2, 5, 8, 11, 14)
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3. A manufacturing method of a semiconductor device, comprising the steps of:
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selectively forming a photocatalyst material by discharging a solution including the photocatalyst material over a substrate;
immersing the photocatalyst material in a solution including a plating catalyst material solution while irradiating the photocatalyst material with light so as to form the plating catalyst material over the photocatalyst material; and
immersing the photocatalyst material in a plating solution including a metal material to form a metal film over a surface of the photocatalyst material. - View Dependent Claims (6, 9, 12, 15)
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4. A manufacturing method of a semiconductor device, comprising the steps of:
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forming a material including a fluorocarbon group over a substrate;
selectively forming a photocatalyst material on the material including a fluorocarbon by discharging a solution including the photocatalyst material;
immersing the photocatalyst material in a solution including a plating catalyst material, while irradiating the photocatalyst material with light, so as to form the plating catalyst material over the photocatalyst material and decompose the material including a fluorocarbon group; and
immersing the plating catalyst material in a plating solution including a metal material to form a metal film over a surface of the photocatalyst material. - View Dependent Claims (7, 10, 13, 16)
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17. A manufacturing method of a semiconductor device, comprising the steps of:
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selectively forming a first material including an amino group over a substrate by discharging a composition including the first material including an amino group;
immersing the first material including an amino group in a solution including a first plating catalyst material so as to form the first plating catalyst material over the first material including an amino group;
immersing the first plating catalyst material in a plating solution including a first metal material so as to form a gate electrode layer over a surface of the first material including an amino group;
forming a gate insulating layer over the gate electrode layer;
selectively forming a second material including an amino group over the gate insulating layer by discharging a composition including the second material including an amino group;
immersing the second material including an amino group in a solution including a second plating catalyst material so as to form the second plating catalyst material over the second material including an amino group; and
immersing the second plating catalyst material in a plating solution including a second metal material so as to form a source or drain electrode layer over a surface of the second material including an amino group; and
forming a semiconductor layer over the source or drain electrode layer. - View Dependent Claims (18, 23, 26)
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19. A manufacturing method of a semiconductor device, comprising the steps of:
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selectively forming a first photocatalyst material by discharging a solution including the first photocatalyst material over a substrate;
immersing the first photocatalyst material in a solution including a first plating catalyst material solution while irradiating the first photocatalyst material with light so as to form the first plating catalyst material over the first photocatalyst material;
immersing the first photocatalyst material in a plating solution including a first metal material to form a gate electrode layer over a surface of the first photocatalyst material;
forming a gate insulating layer over the gate electrode layer;
selectively forming a second photocatalyst material over the gate insulating layer by discharging a solution including the second photocatalyst material;
immersing the second photocatalyst material in a solution including a second plating catalyst material while irradiating the second photocatalyst material with light so as to form the second plating catalyst material over the second photocatalyst material;
immersing the second photocatalyst material in a plating solution including a second metal material to form a source or drain electrode layer over a surface of the second photocatalyst material; and
forming a semiconductor layer over the source or drain electrode layer. - View Dependent Claims (21, 24, 27)
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20. A manufacturing method of a semiconductor device, comprising the steps of:
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forming a material including a fluorocarbon group over a substrate;
selectively forming a first photocatalyst material on the material including a fluorocarbon group by discharging a solution including the first photocatalyst material;
immersing the first photocatalyst material in a solution including a first plating catalyst material, while irradiating the first photocatalyst material with light, so as to form the first plating catalyst material over the first photocatalyst material and decompose the material including a fluorocarbon group;
immersing the first plating catalyst material in a plating solution including a first metal material to form a gate electrode layer over a surface of the first photocatalyst material;
forming a gate insulating layer over the gate electrode layer;
selectively forming a second photocatalyst material over the gate insulating layer by discharging a solution including the second photocatalyst material;
immersing the second photocatalyst material in a solution including a second plating catalyst material while irradiating the second photocatalyst material with light so as to form the second plating catalyst material over the second photocatalyst material;
immersing the second photocatalyst material in a plating solution including a second metal material to form a source or drain electrode layer over a surface of the second photocatalyst material; and
forming a semiconductor layer over the source or drain electrode layer. - View Dependent Claims (22, 25, 28)
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Specification