×

Semiconductor Device Including a Strained Superlattice Layer Above a Stress Layer

  • US 20070007508A1
  • Filed: 07/13/2006
  • Published: 01/11/2007
  • Est. Priority Date: 06/26/2003
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a stress layer; and

    a strained superlattice layer above said stress layer and comprising a plurality of stacked groups of layers;

    each group of layers of said strained superlattice layer comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×