Method of manufacturing optical device having transparent cover and method of manufacturing optical device module using the same

• US 20070010041A1
• Filed: 07/10/2006
• Published: 01/11/2007
• Est. Priority Date: 07/11/2005
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kwon, Yong-Hwan, Heo, Sun-Wook, Kim, Gu-Sung, Kang, Suk-Chae, Kwon, Yong
• Application Number:
  US11/482,774
• Publication Number:
  US 20070010041A1
• Time in Patent Office: Days
• US Class Current: 438/64
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

Example embodiments of the present invention relate to a method of manufacturing an optical device having a transparent cover and a method of manufacturing an optical device module using the optical device. According to an example method of manufacturing the optical device, a semiconductor substrate having a plurality of dies including an effective pixel and a plurality of bonding pads arranged around the effective pixel is prepared. A protective layer may be formed on the semiconductor substrate to selectively cover the effective pixel. An adhesive pattern may be formed to enclose an edge of the effective pixel, and a transparent cover may be attached to correspond to the effective pixel using the adhesive pattern.

Claims

1. A method of manufacturing an optical device, the method comprising:

providing a semiconductor substrate where an image device is formed;

forming a protective layer on the image device;

forming an adhesive pattern on the semiconductor substrate; and

attaching a cover on the semiconductor substrate using the adhesive pattern.

2. The method of claim 1, wherein attaching the cover includes:

adhering the cover onto the adhesive pattern; and

curing the adhesive pattern.

3. The method of claim 2, wherein the semiconductor substrate comprises a plurality of image devices.

4. The method of claim 3, wherein attaching the cover comprises individually attaching a single image device with a single cover.

5. The method of claim 3, wherein attaching the cover comprises collectively attaching a plurality of image devices with a plurality of covers.

6. The method of claim 5, wherein each of the plurality of the image devices comprises a solid-state image sensing device including a charge coupled device (CCD) or a CMOS image sensor (CIS).

7. The method of claim 3, wherein each of the plurality of image devices includes a light-receiving device upon which a microlens is placed.

8. The method of claim 7, wherein forming the protective layer includes depositing a transparent layer along a surface of a microlens of each of the plurality of image devices.

9. The method of claim 8, wherein the protective layer is an oxide layer deposited in a temperature range of 100-200°

C.

10. The method of claim 9, wherein the oxide layer is formed using chemical vapor deposition (CVD) or atomic layer deposition (ALD).

11. The method of claim 7, further comprising, after forming the protective layer on each of the plurality of image devices, etching a portion of the protective layer such that the protective layer exists on only each microlens.

12. The method of claim 1, wherein forming the adhesive pattern comprises:

forming an adhesive layer on a resulting structure of the semiconductor substrate where the protective layer is formed; and

patterning the adhesive layer.

13. The method of claim 12, wherein the adhesive layer has a thickness of 10 μ

m-30 μ

m.

14. The method of claim 12, wherein the adhesive layer comprises a photosensitive polymer.

15. The method of claim 14, wherein pattering the adhesive layer comprises:

exposing a portion of the adhesive layer; and

developing the exposed portion.

16. The method of claim 12, further comprising, after forming the adhesive pattern, removing an adhesive pattern residual material remaining on the protective layer.

17. The method of claim 16, wherein removing the adhesive pattern residual material comprises removing the adhesive pattern residual material using an ashing or descum process.

18. The method of claim 1, further comprising, between forming the adhesive pattern and attaching the cover, inspecting whether a die including the image device has been normally formed.

19. The method of claim 2, wherein the cover is transparent, adhering the transparent cover includes preliminarily attaching the transparent cover for a die including the image device, and curing the transparent cover includes permanently attaching the preliminarily attached transparent cover.

20. The method of claim 18, wherein preliminarily attaching the transparent cover includes:

aligning the transparent cover with the image device of the die using a die bonder; and

placing the aligned transparent cover on the adhesive pattern.

21. The method of claim 20, wherein during the placing of the transparent cover, the substrate is maintained in a temperature range of 10-100°

C., and the transparent cover is maintained in a temperature range of 100-300°

C.

22. The method of claim 19, wherein permanently attaching the transparent cover on the semiconductor substrate includes inserting the semiconductor substrate, on which the transparent cover is preliminarily attached, into an oven to cure the semiconductor substrate.

23. The method of claim 22, wherein curing the cover is performed in a temperature range of 100-250°

C. for 30-90 minutes.

24. The method of claim 1, wherein the semiconductor substrate has a plurality of dies including an image device and a plurality of bonding pads arranged around the image device,

the protective layer selectively covers the image device, and

the adhesive pattern encloses the image device, the method further comprising:

removing a residual material of the adhesive pattern remaining on the protective layer, and

attaching the transparent cover on a normal die of the plurality of dies.

25. The method of claim 24, wherein attaching the transparent cover includes adhering the transparent cover onto the adhesive pattern;

and

hardening the semiconductor substrate to collectively and permanently attach a plurality of transparent covers.

26. The method of claim 24, wherein the image device comprises a light-receiving device upon which a microlens is placed.

27. The method of claim 26, wherein forming the protective layer includes depositing a transparent layer along the surface of the microlens on the image device.

29. The method of claim 24, wherein the forming of the protective layer to selectively cover the image device comprises:

forming a protective layer on a resulting structure of the semiconductor substrate; and

etching a portion of the protective layer such that the protective layer exists on only the image device.

30. The method of claim 24, wherein forming the adhesive pattern includes:

forming an adhesive layer on a resulting structure of the semiconductor substrate where the protective layer is formed; and

patterning the adhesive layer to enclose the image device between the image device and the plurality of bonding pads.

31. The method of claim 30, wherein the adhesive layer has a thickness of 10 μ

m-30 μ

m.

32. The method of claim 30, wherein the adhesive layer comprises a photosensitive polymer.

33. The method of claim 21, wherein the patterning of the adhesive layer comprises:

exposing a portion of the adhesive layer; and

developing the exposed portion.

34. The method of claim 24, wherein removing the residual material comprises removing the residual material using an ashing or descum process.

35. The method of claim 24, wherein adhering to the transparent cover comprises:

aligning the transparent cover with an image device of the die using a die bonder; and

placing the aligned transparent cover on the adhesive pattern.

36. The method of claim 33, wherein in the placing of the transparent cover, the substrate is maintained in a temperature range of 10-100°

C., and the transparent cover is maintained in a temperature range of 100-200°

C.

37. The method of claim 23, wherein the hardening of the semiconductor substrate comprising hardening the semiconductor substrate in an oven maintaining a temperature range of 100-250°

C. for 30-90 minutes.

38. A method of manufacturing an optical device module comprising:

performing the method of claim 24;

sawing the semiconductor substrate into individual dies;

mounting each die on a substrate;

electrically connecting each die with the substrate; and

installing a lens on the substrate.

39. The method of claim 38, wherein the protective layer comprises a low temperature oxide layer formed in a temperature range of 100-200°

C.

40. The method of claim 38, wherein the adhesive pattern comprises a photosensitive polymer.

41. The method of claim 38, further comprising, between forming the adhesive pattern and attaching the transparent cover, removing a residual material of the adhesive pattern on the protective layer.

42. The method of claim 38, wherein attaching the transparent cover comprises:

attaching the transparent cover to the image device using a die bonder; and

hardening a resulting structure of the semiconductor substrate in a temperature range of 100-200°

C.

28. The method of claim 28, wherein the transparent layer is an oxide layer deposited in a temperature range of 100-200°

C.