Method for fabricating semiconductor device

• US 20070010096A1
• Filed: 11/18/2005
• Published: 01/11/2007
• Est. Priority Date: 07/08/2005
• Status: Active Grant

• Current Assignee: SK Keyfoundry Incorporated
• Original Assignee: US Bank National Association (US Bancorp)
• Inventors: Shin, Kyoung-Choul, Mun, Seong-Yeol
• Granted Patent: US 7,604,750 B2
• Time in Patent Office: Days
• US Class Current: 438/689
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

A method for fabricating a semiconductor device is provided. The method includes: loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma; etching a gate structure formed on the wafer, thereby generating etch remnants; and removing the etch remnants by using a gas of SF₆ as a main etch gas.

Claims

1. A method for fabricating a semiconductor device, comprising:

loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma;

etching a gate structure formed on the wafer, thereby generating etch remnants; and

removing the etch remnants by using a gas of SF₆ as a main etch gas.

2. The method of claim 1, wherein the material coated on the ceramic dome includes yttrium oxide (Y₂O₃).

3. The method of claim 2, wherein the ceramic dome coated with Y₂O₃ is cleaned via a multi-step process performed at different positions of the ceramic dome depending on pressure conditions.

4. The method of claim 1, wherein the removing of the etch remnants is carried out by employing a dry cleaning process using a mixture gas obtained by mixing the SF₆ gas with oxygen (O₂) gas.

5. The method of claim 1, wherein the mixture gas is supplied for approximately 50 seconds at a source power of approximately 1,600 W and a bias power of approximately 50 W.

6. A method for fabricating a semiconductor device, comprising:

loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma;

etching a gate structure formed on the wafer, thereby generating etch remnants;

removing the etch remnants using a gas of SF₆ as a main etch gas; and

performing a recovery process.

7. The method of claim 6, wherein the material coated on the ceramic dome includes yttrium oxide (Y₂O₃).

8. The method of claim 7, wherein the ceramic dome coated with Y₂O₃ is cleaned via a multi-step process performed at different positions of the ceramic dome depending on pressure conditions.

9. The method of claim 6, wherein the removing of the etch remnants is carried out by employing a dry cleaning process using a mixture gas obtained by mixing the SF₆ gas with oxygen (O₂) gas.

10. The method of claim 6, wherein the mixture gas is supplied for approximately 50 seconds at a source power of approximately 1,600 W and a bias power of approximately 50 W.

11. The method of claim 6, wherein the performing of the recovery process is carried out by:

supplying a source power of approximately 500 W and a bias power of approximately 80 W at a pressure of approximately 10 mTorr; and

supplying hydrogen bromide (HBr) gas of approximately 100 sccm, helium (He) gas of approximately 40 sccm and oxygen (O₂) gas of approximately 1 sccm for approximately 100 seconds.