White semiconductor light emitting device

• US 20070012931A1
• Filed: 04/23/2004
• Published: 01/18/2007
• Est. Priority Date: 04/25/2003
• Status: Abandoned Application

• Current Assignee: Luxpia Co., Ltd.
• Original Assignee: Luxpia Co., Ltd.
• Inventors: Lee, Min-Sang, Kim, Yong-Tae, Lee, Sang-Ho, Kim, Jin-Hwan, Lee, Dong-Yeoul
• Application Number:
  US10/554,469
• Publication Number:
  US 20070012931A1
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: C09K 11/77062 Silicates
• CPC Class Codes: C09K 11/886 with rare earth metals
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: Y02B 20/00 Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

A white light semiconductor light emitting device includes a semiconductor LED and first and second phosphors provided on a light emitting region of the LED to emit light within a first wavelength range, which is different from that of light emitted from the LED, by absorbing a portion of the light emitted from the LED. The first and second phosphors are respectively a barium-silicate-base green phosphor and a zinc-selenium-base red phosphor.

Claims

1-15. -15. (canceled)

16. A white light semiconductor light emitting device comprising:

a semiconductor LED; and

first and second phosphors provided on a light emitting region of the LED to emit light within a first wavelength range, which is different from that of light emitted from the LED, by absorbing a portion of the light emitted from the LED,

wherein the first and second phosphors are respectively a barium-silicate-base green phosphor and a zinc-selenium-base red phosphor.

17. The white light semiconductor light emitting device of claim 16, wherein the LED is formed of a GaN, InGaN, AlGaN, or AlGaInN-base blue LED chip.

18. The white light semiconductor light emitting device of claim 16, wherein the LED is disposed in a hole cup or a reflector for reflecting light emitted from the LED and is molded by epoxy resin containing phosphors.

19. The white light semiconductor light emitting device of any one of claims 18, wherein the first and second phosphors are randomly mixed or mixed in a matrix pattern.

20. The white light semiconductor light emitting device of claim 18, wherein the first and second phosphors are mixed with the epoxy mold resin.

21. The white light semiconductor light emitting device of any one of claims 20, wherein the first and second phosphors are randomly mixed or mixed in a matrix pattern.

22. The white light semiconductor light emitting device of any one of claims 16, wherein the first and second phosphors are randomly mixed or mixed in a matrix pattern.

23. The white light semiconductor light emitting device of claim 16, wherein the phosphor is formed of spherical particles or flake-like particles, a size of each particle being 0.1-50 μ

m

24. The white light semiconductor light emitting device of claim 16, wherein particles of the first and second phosphors are filled in a hole cup or a reflector in the order of large, medium, and small sizes.

25. The white light semiconductor light emitting device of claim 16, wherein the LED further comprises a transparent silicone layer or a transparent mold layer to reduce a light path length difference.

27. The white light semiconductor light emitting device of claim 16, which is a surface mounting device that is one of lead and reflector types.

28. The white light semiconductor light emitting device of claim 16, wherein the LED has a substrate formed of sapphire or silicon carbide.

29. The white light semiconductor light emitting device of claim 16, wherein the LED is formed of a GaN, InGaN, AlGaN, or AlGaInN-base UV LED chip.

33. The white light semiconductor light emitting device of claim 16, wherein the phosphors include a green light emitting phosphor that has a chemical formula (Ba1-PXP)2SiO4:

Y where X has at least one chemical element selected from the group consisting of Sr, Ca, Mg, K, and Na and a red light emitting phosphor that has a chemical formula (Zn1-qX′

q)2SeO4;

Y′

where X′

has at least one chemical element selected from the group consisting of Cd, Ca, Mg, Li, Ba, and Sr.

26. A white light semiconductor light emitting device comprising:

anode and cathode leads;

a hole cup formed on an end of one of the anode and cathodes leads;

an LED disposed in the hole cup and electrically connected to the anode and cathode leads;

an epoxy mold for molding the LED in the hole cup; and

a barium-silicate-base green phosphor and a zinc-selenium-base red phosphor that are mixed with the epoxy mold to emit light within a first wavelength range, which is different from that of light emitted from the LED, by absorbing a portion of the light emitted from the LED.

30. A white light semiconductor light emitting device comprising:

an LED;

anode and cathode leads electrically connected to the LED;

a reflector in which the LED is disposed;

an epoxy layer for molding the LED in the reflector, being mixed with phosphors; and

a transparent silicone layer or a transparent mold layer disposed on the epoxy layer.

31. A white light semiconductor light emitting device comprising:

an LED;

anode and cathode leads electrically connected to the LED;

a reflector in which the LED is disposed;

a transparent silicone layer or a transparent mold layer for molding the LED in the reflector;

an epoxy layer mixed with phosphors and disposed on the transparent silicon layer or the transparent mold layer.

32. A white light semiconductor light emitting device comprising:

a PCB;

an LED disposed on the PCB;

a permeable epoxy resin mixed with a barium-silicate-base green phosphor and a zinc-selenium-base red phosphor, the permeable epoxy resin being provided to mold the LED on the PCB; and

a transparent silicone layer or a transparent mold layer disposed on the epoxy layer.