Semiconductor device having MIM capacitor and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- a first capacitor which includes;
a first capacitor insulating film at least including a first insulating film and a first ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, and first and second capacitor electrodes formed to sandwich the first capacitor insulating film and formed of one of Cu and a material containing Cu as a main component.
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Abstract
A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first capacitor which includes;
a first capacitor insulating film at least including a first insulating film and a first ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, and first and second capacitor electrodes formed to sandwich the first capacitor insulating film and formed of one of Cu and a material containing Cu as a main component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a capacitor which includes;
a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a semiconductor device comprising:
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forming a groove in an inter-level insulating film, embedding a first alloy layer used as a first capacitor electrode, and formed of a material containing Cu as a main component and a first preset metal element in the groove, forming an insulating film on the first alloy layer, performing heat treatment to form a first ferroelectric film containing a compound of the first preset metal element and a constituent element of the insulating film as a main component and having a dielectric constant larger than that of the insulating film on an interface between the insulating film and the first alloy layer in a self-alignment fashion, and forming a second alloy layer used as a second capacitor electrode and formed of a material containing Cu as a main component and a second preset metal element on the insulating film. - View Dependent Claims (18, 19, 20)
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Specification