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Terminations for semiconductor devices with floating vertical series capacitive structures

  • US 20070012983A1
  • Filed: 07/14/2006
  • Published: 01/18/2007
  • Est. Priority Date: 07/15/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a) a top region, an intermediate region, and a bottom region;

    b) a controllable current path traversing any of said regions;

    c) a first insulating trench coextensive with and girding said top region and said intermediate region;

    d) a first series capacitive structure disposed in said insulating trench and having a biased top element;

    wherein said intermediate region has a capacitive property for establishing a capacitive coupling between said first series capacitive structure and said intermediate region, thereby obtaining a high breakdown voltage in said current path; and

    e) a termination structure electrically coupled to said first series capacitive structure for controlling an electric field distribution at a periphery of said semiconductor device, thereby obtaining an acceptable breakdown voltage in said termination structure.

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