Semiconductor device and method of manufacturing thereof

• US 20070015302A1
• Filed: 09/20/2006
• Published: 01/18/2007
• Est. Priority Date: 01/08/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Goto, Yuugo, Takayama, Toru, Nishi, Kazuo
• Granted Patent: US 7,501,306 B2
• Time in Patent Office: Days
• US Class Current: 438/48
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05024 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05569 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05669 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16238 the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1446 : in a repetitive configuration
• CPC Class Codes: H01L 29/66757 : Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys

Abstract

The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;

crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;

forming a first semiconductor element by using the crystallized semiconductor film as a first active region;

attaching a support to the first semiconductor element;

causing separation between the metal film and the insulating film;

forming a second amorphous semiconductor film over the first semiconductor element after attaching a second substrate to the insulating film and separating the support; and

forming a second semiconductor element using the second amorphous semiconductor film as a second active region.

7. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein metal oxide is formed between the metal film and the insulating film.

8. The method for manufacturing the semiconductor device according to claim 7, wherein the separation between the metal film and the insulating film occurs between the metal film and the metal oxide film, within the metal oxide film, or between the metal oxide film and the insulating film.

9. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein the first amorphous semiconductor film and the second amorphous semiconductor film include hydrogen.

10. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein the first semiconductor element is a thin film transistor.

11. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein the second semiconductor element is a diode or a thin film transistor.

12. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein the crystallization is performed by heat treatment at such a temperature that hydrogen in the first amorphous semiconductor film is released or diffused.

13. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein the metal film comprises at least one selected from the group consisting of W, Ti, Ta, Mo, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir.

14. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein the insulating film is a silicon oxide film, a silicon oxynitride film, or a metal oxide film.

15. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein the second substrate is a plastic substrate or an organic resin member.

16. The method for manufacturing the semiconductor device according to any one of claims 1 to 6, wherein the semiconductor device includes an optical sensor, a photoelectric conversion element, or a solar battery.

2. A method for manufacturing a semiconductor device, comprising the steps of:

forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;

crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;

forming a first semiconductor element by using the crystallized semiconductor film as a first active region;

forming a second amorphous semiconductor film;

forming a second semiconductor element using the second amorphous semiconductor film as a second active region;

attaching a support to the first semiconductor element and the second semiconductor element; and

causing separation between the metal film and the insulating film.

3. A method for manufacturing a semiconductor device, comprising the steps of:

forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;

crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;

forming a first semiconductor element by using the crystallized semiconductor film as a first active region;

forming a second amorphous semiconductor film;

forming a second semiconductor element using the second amorphous semiconductor film as a second active region;

attaching a support to the first semiconductor element and the second semiconductor element;

causing separation between the metal film and the insulating film; and

separating the support after attaching a second substrate to the insulating film.

4. A method for manufacturing a semiconductor device, comprising the steps of:

forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;

crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;

forming a first semiconductor element by using the crystallized semiconductor film as a first active region;

attaching a support to the first semiconductor element by using an adhesive;

causing separation between the metal film and the insulating film;

forming a second amorphous semiconductor film over the first semiconductor element after attaching a second substrate to the insulating film by using an adhesive bond and separating the support by removing the adhesive; and

forming a second semiconductor element using the second amorphous semiconductor film as a second active region.

5. A method for manufacturing a semiconductor device, comprising the steps of:

forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;

crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;

forming a first semiconductor element by using the crystallized semiconductor film as a first active region;

forming a second amorphous semiconductor film;

forming a second semiconductor element using the second amorphous semiconductor film as a second active region;

attaching a support to the first semiconductor element and the second semiconductor element by using an adhesive; and

causing separation between the metal film and the insulating film.

6. A method for manufacturing a semiconductor device, comprising the steps of:

forming a metal film, an insulating film, and a first amorphous semiconductor film in sequence over a first substrate;

crystallizing the first amorphous semiconductor film to form a crystallized semiconductor film;

forming a first semiconductor element by using the crystallized semiconductor film as a first active region;

forming a second amorphous semiconductor film;

forming a second semiconductor element using the second amorphous semiconductor film as a second active region;

attaching a support to the first semiconductor element and the second semiconductor element by using an adhesive;

causing separation between the metal film and the insulating film; and

separating the support by removing the adhesive after attaching a second substrate to the separated insulating film by using an adhesive bond.