Semiconductor device and manufacturing method thereof

• US 20070015315A1
• Filed: 07/11/2006
• Published: 01/18/2007
• Est. Priority Date: 07/13/2005
• Status: Abandoned Application

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Shiraishi, Akinori, Higashi, Mitsutoshi, Taguchi, Yuichi
• Application Number:
  US11/484,039
• Publication Number:
  US 20070015315A1
• Time in Patent Office: Days
• US Class Current: 438/113
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05K 1/183 Components mounted in and supported by recessed areas of the printed circuit board
• CPC Class Codes: H05K 2201/10106 Light emitting diode [LED]

Abstract

A manufacturing method of a semiconductor device is disclosed. The manufacturing method includes a first step that mounts plural semiconductor elements on a first substrate, a second step that inspects each of the semiconductor elements mounted on the first substrate, a third step that divides the first substrate by dicing so that a divided first substrate includes at least one semiconductor element, and a fourth step that mounts the divided first substrate in which at least one semiconductor element is mounted on a second substrate.

Claims

1. A manufacturing method of a semiconductor device, comprising:

a first step that mounts a plurality of semiconductor elements on a first substrate;

a second step that inspects each of the semiconductor elements mounted on the first substrate;

a third step that divides the first substrate by dicing so that a divided first substrate includes at least one semiconductor element; and

a fourth step that mounts the divided first substrate in which at least one semiconductor element is mounted on a second substrate.

2. The manufacturing method of the semiconductor device as claimed in claim 1, wherein:

the semiconductor element is an optical function element.

3. The manufacturing method of the semiconductor device as claimed in claim 1, wherein:

the first step includes a step that forms an optical function layer which operates for a transmission light on the semiconductor element.

4. The manufacturing method of the semiconductor device as claimed in claim 3, wherein:

the semiconductor element is an LED and the optical function layer is a fluorescent substance layer.

5. The manufacturing method of the semiconductor device as claimed in claim 4, wherein:

the LED is inspected in the second step while emitting light.

6. The manufacturing method of the semiconductor device as claimed in claim 3, wherein:

the optical function layer is formed by an inkjet method.

7. The manufacturing method of the semiconductor device as claimed in claim 1, wherein:

wiring sections formed on the first substrate are connected to the semiconductor element via connecting sections by ultrasonic bonding.

8. The manufacturing method of the semiconductor device as claimed in claim 1, wherein:

other wiring sections formed on the first substrate are connected to a wiring section formed on the second substrate by solder.

9. A semiconductor device, comprising:

a first substrate on which a semiconductor element is mounted; and

a second substrate on which the first substrate is mounted, wherein

the semiconductor element is an optical function element and an optical function layer which operates for a transmission light is formed on the optical function element.

10. The semiconductor device as claimed in claim 9, wherein:

the optical function element is an LED.

11. The semiconductor device as claimed in claim 9, wherein:

the optical function layer is a fluorescent substance layer.

12. The semiconductor device as claimed in claim 9, wherein:

a concave section is formed in the second substrate so as to contain the first substrate on which the semiconductor element is mounted and a reflection surface is formed on the concave section.

13. The semiconductor device as claimed in claim 9, wherein:

wiring sections are formed to penetrate the first substrate and connect the semiconductor element to a wiring section formed on the second substrate via wiring sections and connecting layers.

14. The semiconductor device as claimed in claim 9, wherein:

wiring sections are formed on the first substrate to connect to the semiconductor element via connecting layers, and the wiring sections are connected to a wiring section formed on the second substrate by wire bonding.

15. The semiconductor device as claimed in claim 9, wherein:

a concave section is formed in the first substrate so as to contain the semiconductor element, and wiring sections are formed to penetrate the first substrate so as to connect the semiconductor element to a second substrate via connecting sections and wiring sections are connected to a wiring section formed on the second substrate.

16. The semiconductor device as claimed in claim 9, wherein:

a concave section is formed in the first substrate so as to contain the semiconductor element, the concave section is formed to have a taper shape, a reflection surface is formed on the taper-shaped surface of the concave section, and wiring sections are formed to penetrate the first substrate so as to connect the semiconductor element to a second substrate via connecting sections, and the wiring sections are connected to a wiring section formed on the second substrate.

17. The semiconductor device as claimed in claim 9, wherein:

the first substrate is a silicon substrate.