Lateral growth method for defect reduction of semipolar nitride films
First Claim
1. A method of defect reduction for a semipolar nitride film, comprising:
- performing a lateral growth of a semipolar nitride over a mask or gaps to reduce defect density in the semipolar nitride.
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Abstract
A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.
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13 Claims
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1. A method of defect reduction for a semipolar nitride film, comprising:
performing a lateral growth of a semipolar nitride over a mask or gaps to reduce defect density in the semipolar nitride. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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