Three-dimensional acceleration sensor and method for fabricating the same
First Claim
1. A method for fabricating a three-dimensional acceleration sensor, comprising:
- providing a semiconductor substrate having first and second surfaces;
forming an insulating layer on the first surface of the semiconductor substrate;
forming an active layer on the insulating layer;
forming a plurality of openings on the active layer at a first region, which is to be located above a movable mass with a predetermined space;
selectively removing the insulating layer located under the first region in a wet-etching process through the plurality of openings; and
selectively removing the active layer to form a groove separating the first region from a movable mass.
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Abstract
According to the present invention, a method for fabricating a three-dimensional acceleration sensor, comprising: providing a semiconductor substrate having first and second surfaces; forming an insulating layer on the first surface of the semiconductor substrate; forming an active layer on the insulating layer; forming a plurality of openings on the active layer at a first region, which is to be located above a movable mass with a predetermined space; selectively removing the insulating layer located under the first region in a wet-etching process through the plurality of openings; and selectively removing the active layer to form a groove separating the first region from a movable mass.
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Citations
29 Claims
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1. A method for fabricating a three-dimensional acceleration sensor, comprising:
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providing a semiconductor substrate having first and second surfaces;
forming an insulating layer on the first surface of the semiconductor substrate;
forming an active layer on the insulating layer;
forming a plurality of openings on the active layer at a first region, which is to be located above a movable mass with a predetermined space;
selectively removing the insulating layer located under the first region in a wet-etching process through the plurality of openings; and
selectively removing the active layer to form a groove separating the first region from a movable mass. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13, 14, 15, 16, 17, 18, 19, 20)
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12. A three-dimensional acceleration sensor, comprising:
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a semiconductor substrate having first and second surfaces;
an insulating layer, formed on the first surface of the semiconductor substrate; and
an active layer, formed on the insulating layer, wherein the active layer comprises;
a plurality of openings thereon at a first region, which is located above a movable mass with a predetermined space; and
a groove separating the first region from the movable mass,the insulating layer is removed from a region under the first region in a wet-etching process through the plurality of openings, and the insulating layer is partly remained within the groove so that the insulating layer comprises an extended region, which extends from the movable mass toward the first region.
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21. A method for fabricating a three-dimensional acceleration sensor, comprising:
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providing a semiconductor substrate having first and second surfaces;
forming an insulating layer on the first surface of the semiconductor substrate;
forming an active layer on the insulating layer;
providing a glass plate on the second surface of the semiconductor substrate;
forming a plurality of openings on the active layer at a first region, which is to be located above a movable mass with a predetermined space;
selectively removing the insulating layer located under the first region in a wet-etching process through the plurality of openings; and
selectively removing the active layer to form a groove separating the first region from a movable mass. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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Specification