Semiconductor device
First Claim
Patent Images
1. A method of forming a semiconductor device, comprising:
- providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a single-phase crystalline state of ZnxIn2yOx+3y, wherein x and y are each independently in the range of about 1 to about 15;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device can include a channel including a zinc-indium oxide film.
-
Citations
21 Claims
-
1. A method of forming a semiconductor device, comprising:
-
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a single-phase crystalline state of ZnxIn2yOx+3y, wherein x and y are each independently in the range of about 1 to about 15;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method of forming a semiconductor device, comprising:
-
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a mixed-phase crystalline state formed from compounds selected from the group consisting of ZnO, ZnxIn2yOx+3y, In2O3, and mixtures thereof;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
-
-
8. A method of forming a semiconductor device, comprising:
-
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having an amorphous form from compounds selected from the group consisting of ZnO, ZnxIn2yOx+3y, In2O3, and mixtures thereof;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
-
-
9. A method of manufacturing a semiconductor device, comprising:
-
providing a drain electrode;
providing a source electrode;
step for providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds;
step for depositing a channel including zinc-indium oxide from the precursor composition contacting the drain electrode and the source electrode;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (10, 11, 12)
-
-
13. A method of forming a channel, comprising:
-
providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds; and
depositing the channel including zinc-indium oxide from the precursor composition to electrically couple a drain electrode and a source electrode. - View Dependent Claims (14, 15)
-
-
16. A semiconductor device formed by steps, comprising:
-
providing a drain electrode;
providing a source electrode;
providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds;
depositing a channel including zinc-indium oxide from the precursor composition to contact the drain electrode and the source electrode;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (17, 18)
-
-
19. A method for operating a semiconductor device, comprising:
-
providing a semiconductor device that includes a drain electrode, a source electrode, a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide, a gate electrode, and a gate dielectric positioned between the gate electrode and the channel; and
applying a voltage to the gate electrode to effect a flow of electrons through zinc-indium oxide of the channel. - View Dependent Claims (20, 21)
-
Specification