Stacked transistors and process

• US 20070018166A1
• Filed: 07/22/2005
• Published: 01/25/2007
• Est. Priority Date: 07/22/2005
• Status: Active Grant

• Current Assignee: Translucent Inc. (Silex Systems Ltd.)
• Original Assignee: Translucent Inc. (Silex Systems Ltd.)
• Inventors: Atanackovic, Petar, Lebby, Michael
• Granted Patent: US 7,579,623 B2
• Time in Patent Office: Days
• US Class Current: 257/64
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/823878 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

A method of horizontally stacking transistors on a common semiconductor substrate is initiated by providing a single crystal, generally silicon, semiconductor substrate. A plurality of transistors are formed on the single crystal semiconductor substrate and encapsulated in an insulating layer, such as silicon dioxide. One or more openings are formed through the insulating layer between the plurality of transistors so as to expose a surface of the single crystal semiconductor substrate. A layer of single crystal rare earth insulator material is epitaxially grown on the exposed surface of the single crystal semiconductor substrate. A layer of single crystal semiconductor material, generally silicon, is epitaxially grown on the layer of single crystal rare earth insulator material. An intermixed transistor is formed on the layer of single crystal semiconductor material.

Claims

1. A method of horizontally stacking transistors on a common semiconductor substrate comprising the steps of:

providing a single crystal semiconductor substrate;

forming a plurality of transistors on the single crystal semiconductor substrate;

encapsulating the plurality of transistors in an insulating layer;

forming an opening through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate;

epitaxially growing a first layer of single crystal rare earth insulator material on the exposed surface of the single crystal semiconductor substrate;

epitaxially growing a first layer of single crystal semiconductor material on the first layer of single crystal rare earth insulator material; and

forming an intermixed transistor on the first layer of single crystal semiconductor material.

2. A method as claimed in claim 1 wherein the step of forming the opening includes forming a plurality of openings, and the step of forming the intermixed transistor includes forming a plurality of intermixed transistors, one each in each of the plurality of openings.

3. A method as claimed in claim 2 wherein the step of forming the plurality of intermixed transistors includes forming intermixed transistors with one of different type and different conductivity from the plurality of transistors.

4. A method as claimed in claim 1 wherein the step of providing the single crystal semiconductor substrate includes providing a silicon substrate and the step of epitaxially growing the first layer of single crystal semiconductor material includes epitaxially growing a layer of single crystal silicon.

5. A method as claimed in claim 1 wherein the step of forming the intermixed transistor includes the steps of epitaxially growing a gate insulator layer of rare earth insulating material on the surface of the first layer of single crystal semiconductor material, epitaxially growing a gate stack layer on the gate insulator layer, etching the gate stack layer and the gate insulator layer to define a transistor gate with source and drain areas on opposite sides thereof, doping the source and drain areas to form a source and drain, and depositing metal contacts on the source, drain and gate stack.

6. A method of horizontally stacking transistors on a common semiconductor substrate comprising the steps of:

providing a single crystal semiconductor substrate;

forming a plurality of transistors on the single crystal semiconductor substrate;

encapsulating the plurality of transistors in an insulating layer;

forming an opening through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate; and

epitaxially growing at least one layer combination of a single crystal rare earth conductive layer and a single crystal rare earth insulating layer on the exposed surface of the single crystal semiconductor substrate.

7. A method as claimed in claim 6 further including the steps of epitaxially growing a first layer of single crystal semiconductor material on the layer combination, and forming an intermixed transistor on the first layer of single crystal semiconductor material.

8. A method as claimed in claim 7 wherein the step of forming the intermixed transistor includes the steps of epitaxially growing a gate insulator layer of rare earth insulating material on the surface of the first layer of single crystal semiconductor material, epitaxially growing a gate stack layer on the gate insulator layer, etching the gate stack layer and the gate insulator layer to define a transistor gate with source and drain areas on opposite sides thereof, doping the source and drain areas to form a source and drain, and depositing metal contacts on the source, drain and gate stack.

9. A method as claimed in claim 7 wherein the step of forming the opening includes forming a plurality of openings, and the step of forming the intermixed transistor includes forming a plurality of intermixed transistors, one each in each of the plurality of openings.

10. A method as claimed in claim 9 wherein the step of forming the plurality of intermixed transistors includes forming intermixed transistors with one of different type and different conductivity from the plurality of transistors.

11. A method as claimed in claim 7 wherein the step of providing the single crystal semiconductor substrate includes providing a silicon substrate and the step of epitaxially growing the first layer of single crystal semiconductor material includes epitaxially growing a layer of single crystal silicon.

12. A method as claimed in claim 6 further including the step of using the single crystal rare earth conductive layer of the layer combination to interconnect portions of the plurality of transistors.

13. A method as claimed in claim 6 further including the step of using the single crystal rare earth conductive layer of the layer combination to form inactive components of a circuit.

14. Horizontally stacked transistors comprising:

a single crystal semiconductor substrate;

a plurality of transistors formed on the single crystal semiconductor substrate;

the plurality of transistors encapsulated in an insulating layer;

an opening through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate;

a first layer of single crystal rare earth insulator material epitaxially grown on the exposed surface of the single crystal semiconductor substrate;

a first layer of single crystal semiconductor material epitaxially grown on the first layer of single crystal rare earth insulator material; and

an intermixed transistor formed on the first layer of single crystal semiconductor material.

15. Horizontally stacked transistors as claimed in claim 14 wherein the single crystal semiconductor substrate includes a silicon substrate and the first layer of single crystal semiconductor material includes a layer of single crystal silicon.

16. Horizontally stacked transistors as claimed in claim 14 wherein the intermixed transistor includes a gate insulator layer of rare earth insulating material on the surface of the first layer of single crystal semiconductor material, a gate stack layer on the gate insulator layer, the gate stack layer and the gate insulator layer being etched to define a transistor gate with source and drain areas on opposite sides thereof, the source and drain areas being doped to form a source and drain, and metal contacts deposited on the source, drain and gate stack.

17. Horizontally stacked transistors comprising:

a single crystal semiconductor substrate;

a plurality of transistors formed on the single crystal semiconductor substrate;

the plurality of transistors being encapsulated in an insulating layer;

an opening formed through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate; and

at least one layer combination of a single crystal rare earth conductive layer and a single crystal rare earth insulating layer epitaxially grown on the exposed surface of the single crystal semiconductor substrate.

18. Horizontally stacked transistors as claimed in claim 17 further including a first layer of single crystal semiconductor material epitaxially grown on the layer combination, and an intermixed transistor formed on the first layer of single crystal semiconductor material.

19. Horizontally stacked transistors as claimed in claim 18 wherein the intermixed transistor includes a gate insulator layer of rare earth insulating material epitaxially grown on the surface of the first layer of single crystal semiconductor material, a gate stack layer epitaxially grown on the gate insulator layer, the gate stack layer and the gate insulator layer being etched to define a transistor gate with source and drain areas on opposite sides thereof, the source and drain areas being doped to form a source and drain, and metal contacts deposited on the source, drain and gate stack.

20. Horizontally stacked transistors as claimed in claim 18 further including a plurality of openings formed through the insulating layer, and a plurality of intermixed transistors, one each formed in each of the plurality of openings.

21. Horizontally stacked transistors as claimed in claim 20 wherein the plurality of intermixed transistors include transistors that are one of a different type and a different conductivity from the plurality of transistors.

22. Horizontally stacked transistors as claimed in claim 18 wherein the single crystal semiconductor substrate includes silicon substrate and the first layer of single crystal semiconductor material includes a layer of single crystal icon.

23. Horizontally stacked transistors as claimed in claim 17 wherein the single crystal rare earth conductive layer of layer combination interconnects portions of the plurality transistors.

24. Horizontally stacked transistors as claimed in claim 17 wherein the single crystal rare earth conductive layer of layer combination forms at least a portion of an inactive component of a circuit.