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Stacked transistors and process

  • US 20070018166A1
  • Filed: 07/22/2005
  • Published: 01/25/2007
  • Est. Priority Date: 07/22/2005
  • Status: Active Grant
First Claim
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1. A method of horizontally stacking transistors on a common semiconductor substrate comprising the steps of:

  • providing a single crystal semiconductor substrate;

    forming a plurality of transistors on the single crystal semiconductor substrate;

    encapsulating the plurality of transistors in an insulating layer;

    forming an opening through the insulating layer between the plurality of transistors, the opening exposing a surface of the single crystal semiconductor substrate;

    epitaxially growing a first layer of single crystal rare earth insulator material on the exposed surface of the single crystal semiconductor substrate;

    epitaxially growing a first layer of single crystal semiconductor material on the first layer of single crystal rare earth insulator material; and

    forming an intermixed transistor on the first layer of single crystal semiconductor material.

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