Light emitting diodes with high light extraction and high reflectivity

• US 20070018184A1
• Filed: 03/24/2006
• Published: 01/25/2007
• Est. Priority Date: 07/20/2005
• Status: Abandoned Application

• Current Assignee: Goldeneye, Inc.
• Original Assignee: Goldeneye, Inc.
• Inventors: Beeson, Karl, Livesay, William, Zimmerman, Scott
• Application Number:
  US11/389,201
• Publication Number:
  US 20070018184A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

The invention is a light emitting diode that exhibits high reflectivity to externally incident light and high extraction efficiency for internally generated light. The light emitting diode includes a first reflecting electrode that reflects both externally incident light and internally generated light. The first reflecting electrode can be a metal layer; or a transparent layer and a metal layer; or a transparent layer and a metal layer with a plurality of metal contacts extending from the reflecting metal layer through the transparent layer. A multi-layer semiconductor structure is in contact with the first reflecting layer and has an active region that emits the internally generated light in an emitting wavelength range. The multi-layer semiconductor structure has an absorption coefficient less than 50 cm⁻¹. A second reflecting electrode underlies the multi-layer semiconductor structure and reflects both the externally incident light and the internally generated light. The second reflecting electrode can be a first transparent layer and a reflecting metal layer; or a second transparent layer, a first transparent layer and a reflecting metal layer; or a second transparent layer, a first transparent layer and a reflecting metal layer with a plurality of metal contacts extending from the reflecting metal layer through the first transparent layer to the second transparent layer. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for the internally generated light.

Claims

1. A light emitting diode comprising:

a multi-layer semiconductor structure having a first doped semiconductor layer, an active region and a second doped semiconductor layer, said first doped semiconductor layer and said second doped conductivity layer having opposite n and p conductivity types;

an array of light extracting elements on a first portion of said first doped semiconductor layer extending at least partially into said multi-layer semiconductor structure, said array of light extracting elements transmitting externally incident light into said multi-layer semiconductor structure or transmitting the externally incident light from said multi-layer semiconductor structure;

a first reflecting electrode on a second portion of said first doped semiconductor layer, said second portion of said first doped semiconductor layer being different from said first portion of said first doped semiconductor layer, said first reflecting electrode reflecting the externally incident light;

a second reflecting electrode on said second doped semiconductor layer, said second reflecting electrode reflecting the externally incident light transmitted through said multi-layer semiconductor structure, wherein said second reflecting electrode has a first transparent layer and a reflecting metal layer and wherein said first transparent layer is between said reflecting metal layer and said second doped semiconductor layer;

wherein said active region emits internally generated light in an emitting wavelength range when a voltage is applied between said first reflecting electrode and said second reflecting electrode;

said internally generated light being either emitted through said array of light extracting elements, reflected by said first reflecting electrode or reflected by said second reflecting electrode; and

wherein said multi-layer semiconductor structure has an absorption coefficient less than 50 cm<sup>−

1</sup> in the emitting wavelength range of the internally generated light and wherein said light emitting diode reflects the externally incident light with a reflectivity greater than 60 percent.

2. The light emitting diode of claim 1 further comprising:

a second transparent layer in said second reflecting electrode wherein said second transparent layer is between said first transparent layer and said second doped semiconductor layer.

3. The light emitting diode of claim 2 further comprising:

a plurality of contacts in said second reflecting electrode extending from said reflecting metal layer through said first transparent layer to said second transparent layer.

4. The light emitting diode of claim 1 wherein said first transparent layer is a dielectric material.

5. The light emitting diode of claim 4 wherein said dielectric material is silicon dioxide, silicon nitride or magnesium fluoride.

6. The light emitting diode of claim 1 wherein said first transparent layer is a transparent conductive oxide.

7. The light emitting diode of claim 6 wherein said transparent conductive oxide is indium tin oxide, ruthenium oxide, copper doped indium oxide or aluminum doped zinc oxide.

8. The light emitting diode of claim 6 wherein said transparent conductive oxide is porous.

9. The light emitting diode of claim 1 wherein said reflecting metal layer is silver or aluminum.

10. The light emitting diode of claim 1 wherein said multi-layer semiconductor structure is formed by hydride vapor phase epitaxy.

11. The light emitting diode of claim 1 wherein said array of light extracting elements is an array of pyramids.

12. The light emitting diode of claim 3 wherein said second transparent layer is a transparent conductive oxide.

13. The light emitting diode of claim 1 wherein said first reflecting electrode has a transparent layer and a reflecting metal layer and wherein said transparent layer is between said reflecting metal layer and said first doped semiconductor layer.

14. The light emitting diode of claim 11 further comprising:

a plurality of contacts in said first reflecting electrode extending from said reflecting metal layer through said transparent layer to said first doped semiconductor layer.

15. The light emitting diode of claim 1 wherein said first reflecting electrode and said second reflecting electrode are on opposite sides of said light emitting diode.

16. The light emitting diode of claim 1 wherein said first reflecting electrode and said second reflecting electrode are on the same side of said light emitting diode.