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Vertical GaN-based LED and method of manfacturing the same

  • US 20070018187A1
  • Filed: 07/21/2006
  • Published: 01/25/2007
  • Est. Priority Date: 07/22/2005
  • Status: Active Grant
First Claim
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1. A vertical GaN-based LED (light emitting diode) comprising:

  • an n-electrode;

    a first n-type GaN layer having uneven patterns including a plurality of protuberances for increasing a surface area and formed under the n-electrode;

    a first AlGaN layer formed under the first n-type GaN layer;

    a GaN layer formed under the first AlGaN layer;

    a second AlGaN layer formed under the GaN layer;

    a second n-type GaN layer formed under the second AlGaN layer;

    an active layer formed under the second n-type GaN layer;

    a p-type GaN layer formed under the active layer;

    a p-electrode formed under the p-type GaN layer; and

    a structure support layer formed under the p-electrode.

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