Array substrate for display device

• US 20070019122A1
• Filed: 07/20/2006
• Published: 01/25/2007
• Est. Priority Date: 07/20/2005
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Dong-Hoon, Lee, In-Sung, Choi, Ho-Geun, Choi, Youn-Soo, Cho, Neugng-Ho, Choi, Jin-Chel
• Application Number:
  US11/490,758
• Publication Number:
  US 20070019122A1
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

A substrate for an LCD display device exhibiting improved display quality through lower contact resistance and elimination of undercutting. The display switches have three electrodes, at least one of which has three metal layers, the third of which is formed by nitrating the second metal layer. The pixel electrode is electrically connected to the second metal layer through a contact hole formed through an insulation layer and the second metal layer of the switching device.

Claims

1. An array substrate comprising:

a substrate having a display area and a peripheral area surrounding the display area; and

a switching device formed on the display area and having a gate electrode, a source electrode and a drain electrode, wherein the gate electrode includes a first metal layer, a second metal layer stacked on the first metal layer, and a third metal layer stacked on the second metal layer, and wherein the third metal layer is formed by nitrating the second metal layer.

2. The array substrate of claim 1, wherein the first metal layer comprises aluminum neodymium (AlNd), wherein the second metal layer comprises chrome (Cr), and wherein the third metal layer comprises chrome nitride (CrN_x).

3. The array substrate of claim 1, further comprising:

a first electrode pad extended from the gate electrode and formed on the peripheral area, the first electrode pad including the first metal layer, the second metal layer stacked on the first metal layer, and the third metal layer stacked on the second metal layer;

a first insulation layer formed on the first electrode pad; and

a first transparent electrode formed on the first insulation layer, the first transparent electrode electrically connected to the second metal layer of the first electrode pad through a first via hole, wherein the first via hole is formed through the first insulation layer and the third metal layer.

4. The array substrate of claim 3, wherein the first electrode pad is a gate electrode pad supplying the switching device with gate signals.

5. The array substrate of claim 1, wherein the gate electrode has at least one taper-shaped cross section along a cut line substantially perpendicular to the substrate.

6. The array substrate of claim 1, wherein each of the source electrode and the drain electrode comprises a fourth electrode, a fifth electrode stacked on the fourth electrode, and a sixth electrode stacked on the fifth electrode, and wherein the fourth, the fifth and the sixth metal layers include substantially the same material as the first, the second and the third metal layers, respectively.

7. The array substrate of claim 6, wherein the fourth metal layer comprises aluminum neodymium (AlNd), wherein the fifth metal layer comprises chrome (Cr), and wherein the sixth metal layer comprises chrome nitride (CrN_x).

8. The array substrate of claim 6, further comprising:

a second insulation layer formed on the switching device; and

a pixel electrode formed on the second insulation layer, the pixel electrode electrically connected to the switching device through a contact hole, wherein the contact hole is formed through the second insulation layer and the sixth metal layer.

9. The array substrate of claim 6, further comprising:

a second electrode pad extended from the source electrode and formed on the peripheral area, the second electrode including the fourth metal layer, the fifth metal layer stacked on the fourth metal layer, and the sixth metal layer stacked on the fifth metal layer;

a third insulation layer formed on the second electrode pad; and

a second transparent electrode formed on the third insulation layer, the second transparent electrode electrically connected to the fifth metal layer of the second electrode pad through a second via hole, wherein the second via hole is formed through the third insulation layer and the sixth metal layer.

10. The array substrate of claim 9, wherein the second electrode pad is a data electrode pad supplying the switching device with data signals.

11. The array substrate of claim 6, wherein each of the data electrode and the drain electrode has at least one taper-shaped cross section along a cut line substantially perpendicular to the substrate.

12. An array substrate comprising:

a substrate having a display area and a peripheral area surrounding the display area;

a switching device formed on the display area and having a first electrode, a second electrode and a third electrode;

an electrode pad extended from one of the first, the second and the third electrodes and formed on the peripheral area, the electrode pad including a first metal layer, a second metal layer stacked on the first metal layer, and a third metal layer stacked on the second metal layer, wherein the third metal layer is formed by nitrating the second metal layer;

an insulation layer formed on the electrode pad; and

a transparent electrode formed on the insulation layer, the transparent electrode electrically connected to the second metal layer through a via hole, wherein the via hole is formed through the insulation layer and the third metal layer.

13. The array substrate of claim 12, wherein at least one of the first, the second and the third electrodes of the switching device comprises the first, the second and the third metal layer sequentially stacked.

14. The array substrate of claim 12, wherein the first metal layer comprises aluminum neodymium, the second metal layer comprises chrome, and the third metal layer comprises chrome nitride.

15. The array substrate of claim 12, wherein the electrode pad has a taper-shaped cross section along a cut line substantially perpendicular to the substrate.

16. An array substrate comprising:

a substrate having a display area and a peripheral area surrounding the display area;

a switching device formed on the display area and having a first electrode, a second electrode and a third electrode, wherein at least one of the first, the second and the third electrodes includes a first metal layer, a second metal layer stacked on the first metal layer, and a third metal layer stacked on the second metal layer, and wherein the third metal layer is formed by nitrating the second metal layer;

an electrode pad extended from one of the first, the second and the third electrodes and formed on the peripheral area, the electrode pad including the first metal layer, the second metal layer stacked on the first metal layer, and the third metal layer stacked on the second metal layer;

an insulation layer formed on the substrate where the switching device and the electrode pad are formed;

a first transparent electrode formed on the insulation layer, the first transparent electrode electrically connected to the second metal layer through a contact hole, wherein the contact hole is formed through the insulation layer and the third metal layer of the one of the first, the second and the third electrodes; and

a second transparent electrode formed on the insulation layer, the second transparent electrode electrically connected to the second metal layer through a via hole, wherein the via hole is formed through the insulation layer and the third metal layer of the electrode pad.

17. The array substrate of claim 16, wherein the first metal layer comprises aluminum neodymium, the second metal layer comprises chrome, and the third metal layer comprises chrome nitride.

18. An array substrate comprising:

a substrate;

a first signal line formed on the substrate and including a first metal layer, a second metal layer stacked on the first metal layer, and a third metal layer stacked on the second metal layer, wherein the third metal layer is formed by nitrating the second metal layer;

an insulation layer formed on the first line signal; and

a second signal line formed on the insulation layer to cross the first signal line.

19. The array substrate of claim 18, wherein the second signal line comprises a fourth metal layer, a fifth metal layer stacked on the fourth layer, and a sixth metal layer stacked on the fifth metal layer, and wherein the fourth, the fifth and the sixth metal layers include substantially the same material as the first, the second and the third metal layers, respectively.

20. The array substrate of claim 18, further comprising:

a switching device including a first electrode, a second electrode and a third electrode, wherein the first, the second and the third electrodes are electrically connected to the first and the second signal lines; and

a pixel electrode electrically connected to the switching device,

wherein at least one of the first, the second and the third electrodes includes the first, the second and the third metal layers sequentially stacked on the substrate,

and wherein the pixel electrode is electrically connected to the second metal layer of the switching device through a contact hole, the contact hole is formed through the insulation layer and the third metal layer.

21. The array substrate of claim 18, further comprising:

an electrode pad extended from one of the first and the second signal lines and including the first, the second and the third metal layers sequentially stacked on the substrate; and

a transparent electrode formed on the insulation layer, the transparent electrode electrically connected to the second metal layer of the electrode pad through a via hole, wherein the via hole is formed through the insulation layer and the third metal layer of the electrode.

22. The array substrate of claim 18, wherein the first metal layer comprises aluminum neodymium (AlNd), the second metal layer comprises chrome (Cr), and the third metal layer comprises chrome nitride (CrN_x).

23. An array substrate comprising:

a substrate having a display area and a peripheral area surrounding the display area;

a switching device formed on the display area and having a first electrode, a second electrode and a third electrode, wherein at least one of the first, the second and the third electrodes includes a first metal layer and a second metal layer stacked on the first metal layer, and wherein the second metal layer is nitrated to have nitrogen ions in an upper portion; and

a pixel electrode electrically connected to one of the first, the second and the third electrodes of the switching device.

24. The array substrate of claim 23, wherein the first metal layer comprises aluminum neodymium (AlNd) and the second metal layer comprises chrome (Cr).

25. The array substrate of claim 23, further comprising:

an electrode pad extended from one of the first, the second and the third electrodes and formed on the peripheral area, the electrode pad including a first metal layer and a second metal layer stacked on the first metal layer; and

a transparent electrode formed on the electrode pad and electrically connected to the electrode pad.

26. A method of forming an array substrate comprising:

forming a switching device on a display area of a substrate, wherein the switching device has a first electrode, a second electrode and a third electrode, wherein at least one of the first, the second and the third electrodes has a first metal layer, a second metal layer stacked on the first metal layer, and a third metal layer stacked on the second metal layer, and wherein the third metal layer is formed by nitrating the second metal layer;

forming an insulation layer on the substrate where the switching device is formed; and

forming a pixel electrode on the insulation layer to be electrically connected to the second metal layer of the switching device through a contact hole, the contact hole is formed through the insulation layer and a portion of the third electrode.

27. The method of claim 26, wherein the first metal layer is formed using aluminum neodymium (AlNd), wherein the second metal layer is formed using chrome (Cr), and wherein the third metal layer is formed using chrome nitride (CrN_x).

28. The method of claim 26, wherein forming the switching device comprises:

forming the first metal layer on the substrate in a first chamber;

forming the second metal layer on the substrate where the first metal layer is formed in a second chamber;

forming the third metal layer on the second metal layer by providing nitrogen gas into the second chamber; and

forming the first, the second and the third electrodes by patterning the first, the second and the third metal layers.

29. The method of claim 28, wherein forming the first, the second and the third electrodes comprises:

simultaneously patterning the second and the third metal layers; and

patterning the first metal layer.

30. The method of claim 28, wherein the second chamber is in vacuum state.

31. The method of claim 26, further comprising forming the contact hole by simultaneously removing the insulation layer and the third metal layer, the contact hole exposing a portion of the second metal layer.

32. The method of claim 31, wherein the third metal layer and the insulation layer are etched by substantially the same etching solution.

33. The method of claim 26, further comprising:

forming an electrode pad on a peripheral area surrounding the display area, the electrode pad is extended from one of the first, the second and the third electrodes and includes the first, the second and the third metal layers sequentially stacked on the substrate; and

forming a transparent electrode on the insulation layer to be electrically connected to the second metal layer of the electrode pad through a via hole, the via hole is formed through the insulation layer and the third metal layer of the electrode.

34. The method of claim 33, further comprising forming the via hole by simultaneously and partially etching the insulation layer and the third metal layer of the electrode pad, the via hole exposing a portion of the second metal layer of the electrode pad.

35. A method of forming an array substrate comprising:

forming a first metal layer on a substrate using aluminum alloy;

forming a second metal layer on the first metal layer using chrome;

etching the first and the second metal layers using a mixed etching solution, wherein the mixed etching solution includes a first etching solution for etching the first metal layer and a second etching solution for etching the second metal layer; and

etching the second metal layer using a third etching solution, the second metal layer remaining after being etched using the mixed etching solution.

36. The method of claim 35, wherein the first etching solution comprises ammonium fluoride (NH₄F) and wherein the second etching solution comprises ceric ammonium nitrate (CAN) and nitric acid (HNO₃).

37. The method of claim 36, wherein the mixed etching solution includes about 2 to about 30 percent by weight of ammonium fluoride, about 5 to about 30 percent by weight of CAN, and about 2 to about 20 percent by weight of nitric acid.

38. The method of claim 35, wherein the third etching solution comprises nitric acid.

39. The method of claim 35, wherein the mixed etching solution further includes formic acid or acetic acid.

40. The method of claim 39, wherein the mixed etching solution includes about 1 to about 5 percent by weight of formic acid or acetic acid.

41. The method of claim 35, wherein forming the first and the second metal layer further comprises forming a third metal layer on the second metal layer using chrome nitride.

42. The method of claim 35, wherein the aluminum alloy is aluminum neodymium.

43. A display device comprising:

a first substrate having a transparent electrode;

a second substrate facing the first substrate, the array substrate comprising;

a switching device having a first electrode, a second electrode and a third electrode, wherein at least one of the first, the second and the third electrodes having a first metal layer, a second metal layer, and a third metal layer, and wherein the third metal layer is formed by nitrating the second metal layer;

an insulation layer formed on the switching device;

a second transparent electrode facing the first transparent electrode, the second transparent electrode electrically connected to the second metal layer of the switching device through a contact hole, wherein the contact hole is formed through the insulation layer and the third metal layer of the switching device;

an electrode pad extended from one of the first, the second and the third electrodes and having the first, the second and the third metal layers; and

a third transparent electrode electrically connected to the second metal layer of the electrode pad through a via hole, wherein the via hole is formed through the insulation layer and the third metal layer of the electrode; and

a liquid crystal layer interposed between the first and the second substrate.

44. The display device of claim 43, wherein the first metal layer comprises aluminum neodymium (AlNd), the second metal layer comprises chrome (Cr), and the third metal layer comprises chrome nitride (CrN_x).