Plasma absorption wave limiter

• US 20070019314A1
• Filed: 07/20/2005
• Published: 01/25/2007
• Est. Priority Date: 07/20/2005
• Status: Active Grant

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Inventors: Fuller, Douglas
• Granted Patent: US 7,223,959 B2
• Time in Patent Office: Days
• US Class Current: 359/885
• CPC Class Codes: G21F 1/10 Organic substances; Dispersions in organic carriers

Abstract

A plasma absorption wave limiter is disclosed. The plasma absorption wave limiter comprises a limiting layer and a trigger layer. The limiting layer is transmissive in a pass band of a sensor and capable of generating a reflective and absorptive free electron plasma that will propagate and dissipate therein. The trigger layer is located aft of and in contact with the limiting layer and is capable of residually absorbing incident radiation and initiating the thermal plasma wave in the limiting layer responsive to a threat.

Claims

1. A plasma absorption wave limiter, comprising:

a limiting layer transmissive in a pass band of a sensor and capable of generating a reflective and absorptive free electron plasma that will propagate and dissipate therein; and

a trigger layer located aft of and in contact with the limiting layer and capable of residually absorbing incident radiation and initiating the free electron plasma in the limiting layer responsive to a threat.

2. The plasma absorption wave limiter of claim 1, wherein the limiting layer comprises a solid semiconducting substrate capable of transmitting incident energy in a desired wavelength band.

3. The plasma absorption wave limiter of claim 2, wherein the trigger layer comprises a thin film coating on the substrate, an epitaxially grown impurity layer on the substrate, or an impurity layer implanted in the substrate.

4. The plasma absorption wave limiter of claim 3, wherein the thin film coating comprises a thermochromic, non-linear material.

5. The plasma absorption wave limiter of claim 2, wherein the semiconducting substrate has a low band-gap and a high melting temperature.

6. The plasma absorption wave limiter of claim 1, wherein the trigger layer is located at or near a focal surface of a plurality of associated focusing elements.

7. The plasma absorption wave limiter of claim 6, wherein the trigger layer is located at the focal surface.

8. The plasma absorption wave limiter of claim 1, further comprising at least one of an anti-reflective coating on the triggering layer or the limiting layer.

9. The plasma absorption wave limiter of claim 1, wherein the trigger layer comprises a detector.

10. The plasma absorption wave limiter of claim 1, further comprising a second limiting layer positioned forward of and in contact with the first limiting layer and in which a second thermal plasma wave may be triggered by the first limiting layer.

11. A plasma absorption wave limiter, comprising:

an optically transmissive substrate including a forward face and an aft face relative to a direction of propagation of threat optical energy incident thereon; and

a film formed on the aft side of the transmissive substrate capable of residually absorbing incident energy from a threat that heats the substrate, causing the substrate to generate a plasma wave therefrom that propagates and dissipates into the substrate.

12. The plasma absorption wave limiter of claim 11, wherein the film comprises a thin film coating on the substrate, an epitaxially grown impurity layer on the substrate, or an impurity layer implanted in the substrate.

13. The plasma absorption wave limiter of claim 12, wherein the thin film coating comprises a thermochromic, non-linear material.

14. The plasma absorption wave limiter of claim 13, wherein thermochromic, non-linear material comprises an oxide of vanadium or titanium.

15. The plasma absorption wave limiter of claim 11, wherein the substrate has high transmission in a pass band of a sensor, a low band-gap and a high melting temperature.

16. The plasma absorption wave limiter of claim 11, wherein the film is located near the focal surface of a plurality of associated optical elements.

17. The plasma absorption wave limiter of claim 16, wherein the film is located at the focal surface.

18. The plasma absorption wave limiter of claim 11, further comprising at least one of a tuned-multilayer, optically-active coating on the triggering layer or the limiting layer.

19. The plasma absorption wave limiter of claim 11, further comprising a second optically transmissive substrate positioned forward of and in contact with the first optically transmissive substrate and in which a second plasma wave may be triggered from the first optically transmissive substrate.

20. An optical assembly, comprising:

a plasma absorption wave limiter;

a sensor including a detector protected by the plasma absorption wave limiter; and

a thermal control apparatus in which the sensor is housed to control the operating temperature of the sensor.

21. The optical assembly of claim 20, wherein the plasma wave absorption limiter includes:

a limiting layer transmissive in a pass band of a sensor and capable of generating a reflective and absorptive free electron plasma that will propagate and dissipate therein; and

a trigger layer that is also a reverse-lit detector that absorbs incident radiation to provide both electrical signals and trigger heat and that is located aft of and in contact with the limiting layer and capable of initiating the thermal plasma wave in the limiting layer responsive to a threat.

22. The optical assembly of claim 21, wherein the front surface of the limiting layer is designed to function as at least one of a vacuum seal, a cold window, a band-pass filter, or a field lens.

23. The optical assembly of claim 21, wherein the trigger layer comprises the detector.

24. The optical assembly of claim 20, wherein the plasma wave absorption limiter includes:

an optically transmissive substrate including a forward face and an aft face relative to a direction of propagation of optical energy incident thereon; and

a triggering layer positioned aft of and in contact with the transmissive substrate and capable of detecting incident energy until threat energy heats the triggering layer and a surface of the substrate, causing the substrate to generate a plasma wave therefrom that propagates and dissipates into the substrate.

25. The optical assembly of claim 24, wherein the front surface of the limiting layer functions as at least one of a vacuum seal, a cold window, a band-pass filter, or a field lens.

26. The optical assembly of claim 24, wherein the trigger layer comprises the detector.

27. The optical assembly of claim 20, wherein the detector includes an array of detector elements.

28. The optical assembly of claim 20, wherein the thermal control apparatus includes means for cooling the sensor.

29. The optical assembly of claim 28, wherein the cooling means comprises a temperature controlled dewar.

30. The optical assembly of claim 20, wherein the thermal control apparatus includes a temperature controlled dewar.

31. An optical apparatus, comprising:

a plasma absorption wave limiter, including;

a limiting layer transmissive in a pass band of a sensor and capable of generating a reflective and absorptive free electron plasma that will propagate and dissipate therein; and

a trigger layer located aft of and in contact with the limiting layer and capable of residually absorbing incident radiation and initiating the thermal plasma wave in the limiting layer responsive to a threat; and

a plurality of optical elements located aft of the plasma absorption wave limiter relative to a direction of propagation of the optical energy.

32. The optical apparatus of claim 31, wherein the limiting layer comprises a semiconducting substrate capable of transmitting incident energy in a desired wavelength.

33. The optical apparatus of claim 31, wherein the trigger layer is located at a point corresponding to the focal surface of a plurality of associated optical elements.

34. The plasma absorption wave limiter of claim 31, further comprising at least one anti-reflective coating on the triggering layer or the limiting layer.

35. The plasma absorption wave limiter of claim 31, wherein the plurality of optical elements comprise a LADAR receiver or imaging infrared sensor.

36. The optical assembly of claim 31, wherein the trigger layer comprises the detector.