Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements

• US 20070019337A1
• Filed: 07/19/2005
• Published: 01/25/2007
• Est. Priority Date: 07/19/2005
• Status: Abandoned Application

• Current Assignee: Grandis, Inc. (Samsung Electronics Co. Ltd.)
• Original Assignee: Grandis, Inc. (Samsung Electronics Co. Ltd.)
• Inventors: Huai, Yiming, Apalkov, Dmytro
• Application Number:
  US11/185,507
• Publication Number:
  US 20070019337A1
• Time in Patent Office: Days
• US Class Current: 360/324.100
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect

Abstract

A method and system for providing a magnetic element and a memory using the magnetic element are described. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. At least the free layer has a first end portion, a second end portion and a central portion between the first end portion and the second end portion. The first end portion, the second end portion and the central portion form an S-shape. At least one of the first end portion and the second end portion includes a curve. The magnetic element is also configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.

Claims

1. A magnetic element comprising:

a pinned layer;

a spacer layer, the spacer layer being nonferromagnetic; and

a free layer, the spacer layer residing between the pinned layer and the free layer, at least the free layer having a first end portion, a second end portion and a central portion between the first end portion and the second end portion, the first end portion, the second end portion and the central portion forming an S-shape, at least one of the first end portion and the second end portion including a curve;

wherein the magnetic element is configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.

2. The magnetic element of claim 1 wherein the S-shape has a perimeter free of corners.

3. The magnetic element of claim 1 wherein the first end portion and the second end portion each has an inside curve and an outside curve, the inside curve and the outside curve forming a portion of a perimeter.

4. The magnetic element of claim 3 wherein the first end portion and the second end portion each have an end forming an end curve.

5. The magnetic element of claim 4 wherein the inside curve has a first radius.

6. The magnetic element of claim 5 wherein the end curve has a second radius.

7. The magnetic element of claim 6 wherein the outside curve has a third radius equal to the first radius plus twice the second radius.

8. The magnetic element of claim 7 wherein second radius is not greater than two hundred nanometers.

9. The magnetic element of claim 7 wherein the central portion has a first side and a second side, the first side and the second side being substantially straight and forming another portion of a perimeter of the S-shape.

10. The magnetic element of claim 3 wherein the central portion has a first side and a second side, the first side and the second side being substantially straight and forming another portion of a perimeter of the S-shape.

11. The magnetic element of claim 10 wherein the first side and the second side are substantially parallel.

12. The magnetic element of claim 11 wherein the first end and the second end are separated by a width.

13. The magnetic element of claim 1 wherein the first end portion has a first inside curve and a first outside curve and the second end portion has a second inside curve and a second outside curve, the first inside curve, the second inside curve, the first outside curve and the second outside curve forming a portion of a perimeter.

14. The magnetic element of claim 13 wherein the first inside curve has a first radius and the second inside curve has a second radius different from the first radius.

15. The magnetic element of claim 14 wherein the first outside curve has a third radius and the second outside curve has a fourth radius different from the third radius.

16. The magnetic element of claim 1 wherein the spacer layer is conductive.

17. The magnetic element of claim 1 wherein the spacer layer is insulating.

18. The magnetic element of claim 1 further comprising:

an additional spacer layer, the additional spacer layer being nonferromagnetic, the free layer residing between the additional spacer layer and the spacer layer; and

an additional pinned layer, the additional spacer layer residing between the free layer and the additional pinned layer.

19. The magnetic element of claim 18 wherein at least one of spacer layer and the additional spacer layer is insulating.

20. The magnetic element of claim 19 wherein the other of the spacer layer and the additional spacer layer is conductive.

21. The magnetic element of claim 18 wherein at least one of the spacer layer and the additional spacer layer is conductive.

22. The magnetic element of claim 1 wherein the spacer layer has a shape substantially the same as the S-shape.

23. The magnetic element of claim 1 wherein the pinned layer has a shape substantially the same as the S-shape.

24. The magnetic element of claim 1 wherein the pinned layer is a synthetic pinned layer including at least a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer residing between the first ferromagnetic layer and the second ferromagnetic layer.

25. The magnetic element of claim 1 wherein the free layer is a synthetic free layer including at least a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer residing between the first ferromagnetic layer and the second ferromagnetic layer.

26. The magnetic element of claim 1 further comprising:

a pinning layer for pinning a magnetization of the pinned layer in a first direction.

27. The magnetic element of claim 1 wherein the central portion has a long axis and a short axis, the S shape is asymmetric with respect to both long and short axes of the central portion.

28. The magnetic element of claim 1 wherein the central portion has a center and wherein the S-shape has a rotational or an inversion symmetry about the center.

29. A magnetic element comprising:

a first ferromagnetic layer;

a spacer layer, the spacer layer being nonferromagnetic; and

a second ferromagnetic layer, the spacer layer residing between the first ferromagnetic layer and the second ferromagnetic layer, at least one of the first ferromagnetic layer and the second ferromagnetic layer having a first end portion, a second end portion and a central portion between the first end portion and the second end portion, the first end portion, the second end portion and the central portion forming an S-shape, at least one of the first end portion and the second end portion including a curve;

wherein the magnetic element is configured to allow at least one of the first ferromagnetic layer and the second ferromagnetic layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.

30. A magnetic element comprising:

a pinned layer;

a spacer layer, the spacer layer being nonferromagnetic; and

a free layer, the spacer layer residing between the pinned layer and the free layer, at least the free layer having an S-shape having a perimeter substantially free of corners, the S-shape further including a first end portion, a second end portion, and a central portion between the first end portion and the second end portion, the first end portion and the second end portion each having an inside curve having a first radius, an outside curve having a second radius, and an end curve having a third radius, the inside curve, the outside curve, and the end curve each forming a portion of the perimeter, the second radius being the first radius plus twice the third radius, the central portion having a first side and a second side, the first side and the second side forming another portion of the perimeter, the first side and the second side being substantially parallel and having a width equal to twice the third radius;

wherein the magnetic element is configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.

31. A magnetic memory comprising:

a plurality of magnetic elements, each of the plurality of magnetic elements including a pinned layer, a spacer layer, and a free layer, the spacer layer being nonferromagnetic and residing between the free layer and the pinned layer, at least the free layer having a first end portion, a second end portion and a central portion between the first end portion and the second end portion, the first end portion, the second end portion and the central portion forming an S-shape, at least one of the first end portion and the second end portion including a curve, the magnetic element being configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element; and

a plurality of write lines for providing the write current.

32. The magnetic memory of claim 31 wherein the S-shape has a perimeter free of corners.

33. The magnetic memory of claim 31 wherein the first end portion and the second end portion each has an inside curve and an outside curve, the inside curve and the outside curve forming a portion of a perimeter.

34. The magnetic memory of claim 33 wherein the first end portion and the second end portion each have an end forming an end curve.

35. The magnetic memory of claim 34 wherein the inside curve has a first radius.

36. The magnetic memory of claim 35 wherein the end curve has a second radius.

37. The magnetic memory of claim 36 wherein the outside curve has a third radius equal to the first radius plus twice the second radius.

38. The magnetic memory of claim 37 wherein second radius is not greater than two hundred nanometers.

39. The magnetic memory of claim 37 wherein the central portion has a first side and a second side, the first side and the second side being substantially straight and forming another portion of a perimeter of the S-shape.

40. The magnetic memory of claim 33 wherein the central portion has a first side and a second side, the first side and the second side being substantially straight and forming another portion of a perimeter of the S-shape.

41. The magnetic memory of claim 40 wherein the first side and the second side are substantially parallel.

42. The magnetic memory of claim 41 wherein the first end and the second end each separated by a width.

43. The magnetic memory of claim 31 wherein the S-shape further includes a first end portion, a second end portion, and a central portion between the first end portion and the second end portion, the first end portion having a first inside curve and a first outside curve and the second end portion each having a second inside curve and a second outside curve, the first inside curve, the second inside curve, the first outside curve and the second outside curve forming a portion of a perimeter.

44. The magnetic memory of claim 43 wherein the first inside curve has a first radius and the second inside curve has a second radius different from the first radius.

45. The magnetic memory of claim 44 wherein the first outside curve has a third radius and the second outside curve has a fourth radius different from the third radius.

46. The magnetic memory of claim 31 wherein the spacer layer is conductive.

47. The magnetic memory of claim 31 wherein the spacer layer is insulating.

48. The magnetic memory of claim 31 wherein each of the plurality of magnetic elements further includes:

an additional spacer layer, the additional spacer layer being nonferromagnetic, the free layer residing between the additional spacer layer and the spacer layer; and

an additional pinned layer, the additional spacer layer residing between the free layer and the additional pinned layer.

49. The magnetic memory of claim 48 wherein at least one of spacer layer and the additional spacer layer is insulating.

50. The magnetic memory of claim 49 wherein the other of the spacer layer and the additional spacer layer is conductive.

51. The magnetic memory of claim 48 wherein at least one of the spacer layer and the additional spacer layer is conductive.

52. The magnetic memory of claim 31 wherein the spacer layer has a shape substantially the same as the S-shape.

53. The magnetic memory of claim 31 wherein the pinned layer has a shape substantially the same as the S-shape.

54. The magnetic memory of claim 31 wherein the pinned layer is a synthetic pinned layer including at least a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer residing between the first ferromagnetic layer and the second ferromagnetic layer.

55. The magnetic memory of claim 31 wherein the free layer is a synthetic free layer including at least a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer residing between the first ferromagnetic layer and the second ferromagnetic layer.

56. The magnetic memory of claim 31 wherein each of the plurality of magnetic elements further includes:

a pinning layer for pinning a magnetization of the pinned layer in a first direction.

57. The magnetic memory of claim 31 wherein the central portion has a long axis and a short axis, the S shape is asymmetric with respect to both long and short axes of the central portion.

58. The magnetic memory of claim 31 wherein the central portion has a center and wherein the S-shape has a rotational or an inversion symmetry about the center.

59. A magnetic memory comprising:

a plurality of magnetic elements, each of the plurality of magnetic elements including a pinned layer, a spacer layer and a free layer, the spacer layer being nonferromagnetic and residing between the free layer and the pinned layer, at least the free layer having an S-shape having a perimeter substantially free of corners, the S-shape further including a first end portion, a second end portion, and a central portion between the first end portion and the second end portion, the first end portion and the second end portion each having an inside curve having a first radius, an outside curve having a second radius, and an end curve having a third radius, the inside curve, the outside curve, and the end curve each forming a portion of the perimeter, the second radius being the first radius plus twice the third radius, the central portion having a first side and a second side, the first side and the second side forming another portion of the perimeter, the first side and the second side being substantially parallel and having a width equal to twice the third radius, the magnetic element being configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element; and

a plurality of write lines for providing the write current.

60. A method for providing a magnetic memory comprising:

providing a pinned layer;

providing a spacer layer, the spacer layer being nonferromagnetic; and

providing a free layer, the spacer layer residing between the pinned layer and the free layer, at least the free layer having a first end portion, a second end portion and a central portion between the first end portion and the second end portion, the first end portion, the second end portion and the central portion forming an S-shape, at least one of the first end portion and the second end portion including a curve;

wherein the magnetic element is configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.