Semiconductor memories with block-dedicated programmable latency register
First Claim
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1. A semiconductor memory device, comprising:
- at least one memory bank having a plurality of memory blocks to store data, the data stored in the memory blocks capable of being read in response to a read command;
a control unit to generate a plurality of CL values and to dedicate the CL values to predetermined ones of the memory blocks to be read; and
an output circuit to output the data in response to a read signal activated by the read command, wherein the output circuit outputs the data from each of the memory blocks based on the dedicated CL values.
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Abstract
An apparatus and method to delay output of data from different regions of a memory device in response to a read enable signal, the delaying of the output of data is based on the location of the regions of the memory device with respect to an output circuit that receives the data, wherein the different regions of the memory device have different CAS latency values dedicated to each region to set the delay time of each region of the memory device.
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Citations
39 Claims
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1. A semiconductor memory device, comprising:
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at least one memory bank having a plurality of memory blocks to store data, the data stored in the memory blocks capable of being read in response to a read command;
a control unit to generate a plurality of CL values and to dedicate the CL values to predetermined ones of the memory blocks to be read; and
an output circuit to output the data in response to a read signal activated by the read command, wherein the output circuit outputs the data from each of the memory blocks based on the dedicated CL values. - View Dependent Claims (2, 3)
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4. A latency control unit usable with a memory device having a plurality of memory blocks to store data, comprising:
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a CL register including at least one set of mode registers, each set of mode registers to generate one or more CAS latency values and being dedicated to one of the memory blocks;
a CL Mux to receive the generated CAS latency values from the at least one set of mode registers and to select one of the received CAS latency values based on a signal containing information on the memory blocks to be read; and
an output enable circuit to receive the selected CAS latency value and a read enable signal activated by a read command and to output an output enable signal to an output circuit. - View Dependent Claims (5)
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6. A latency control unit usable with a memory device having a plurality of memory blocks to store data and a data output circuit to enable output of the stored data from the memory blocks in accordance with a read enable signal, the latency control unit comprising:
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a latency determining unit to determine a plurality of latency values, and to select predetermined ones of the latency values based on an address signal indicating locations of the memory blocks to be read; and
an output enable unit to receive the latency values output from the latency determining unit and to apply the latency values to the data output circuit to delay output of data from the plurality of memory blocks, wherein the data is output according to predetermined ones of the plurality of latency values based on the location of the memory block in which the data is being output.
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7. A memory device comprising:
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at least one memory bank including a plurality of memory blocks;
an address buffer to receive an address signal, to output MRS addresses to set a CL mode when an MRS command is input, and to output addresses of the address signal when a read command is input;
an address decoder to decode the addresses and select one of the memory blocks having block addresses;
a command decoder to receive the MRS command and output a pMRS signal, and to receive the read command and to output a read enable signal; and
a CAS latency control unit to receive the MRS addresses and the pMRS signal when the MRS command is input so that the CL mode having a plurality of CL values is set, to receive the block addresses to activate one of the plurality of CL values and the read enable signal, and to output an output enable signal to an output circuit according to the activated CL value, wherein the output circuit outputs read data from the selected memory block responsive to the output enable signal. - View Dependent Claims (8)
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9. A memory device comprising:
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an output circuit;
a plurality of memory blocks that are different distances from the output circuit; and
a CAS latency control part to operate the output circuit in a plurality of modes including at least a first mode in which the output circuit is operated with a CAS latency value that is the same for accessing the plurality of memory blocks and a second mode in which the output circuit is operated with CAS latency values that are different for accessing the plurality of memory blocks. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A memory device comprising:
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a plurality of memory units; and
a control part to receive a current address associated with a read command, to select a CAS latency value on the fly from among a plurality of CAS latency values associated with the plurality of memory units according to the current address, and to apply the selected CAS latency value to an output circuit of the memory device. - View Dependent Claims (26)
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27. A method of accessing data from a semiconductor memory device including a plurality of memory blocks, the method comprising:
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setting a CL mode having a plurality of CL values to correspond to the plurality of memory blocks when an MRS command is input;
receiving an address to indicate which block is read when a read command is input;
selecting one of the plurality of CL values indicated by the received address;
delaying a read enable signal associated with the read command by a number of clocks designated by the selected CL value and outputting an output enable signal to an output circuit according to the delayed read enable signal; and
outputting data read from the block indicated by the address based on the output enable signal.
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28. A method of accessing data from a semiconductor memory device including a plurality of memory banks each having a plurality of memory blocks therein to store data, the method comprising:
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dedicating a plurality of CL values to be used by an output circuit that enables data stored in the plurality of memory blocks to be output according to the corresponding plurality of CL values;
receiving an address of a selected memory block to be read associated with a read command;
providing an enable signal that is delayed according to the CL value of the addressed memory block to the output circuit; and
outputting the data read from the addressed memory block according to when the delayed enable signal is received. - View Dependent Claims (29, 30)
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31. A method of reading data from a memory device having a at least two memory blocks, comprising:
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providing an address signal containing information pointing to at least two addresses of the memory device to be read;
selecting at least two CL values that delay for predetermined periods of time outputting of the data to be read from the memory device based on the address signal information; and
enabling output of the data to be read from the at least two addresses of the memory device at different delayed periods of time based on the CL value selected for the corresponding address upon receiving a read enable signal instructing the data to be read from the at least two addresses of the memory device. - View Dependent Claims (32)
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33. A method of reading data from a memory device having a I/O pad and a plurality of memory blocks that are different distances from the I/O pad, the method comprising:
applying different CAS latency values to the plurality of memory blocks on the fly when a read command is input.
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34. A method of managing data read commands in a memory device, the method comprising:
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selecting different column address strobe (CAS) latency values to correspond to memory blocks having different data access times; and
delaying a read enable signal associated with each of the memory blocks according to the different CAS latency values when the different memory blocks are accessed. - View Dependent Claims (35, 36, 37, 38, 39)
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Specification