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Method for Making a Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer

  • US 20070020833A1
  • Filed: 07/13/2006
  • Published: 01/25/2007
  • Est. Priority Date: 06/26/2003
  • Status: Abandoned Application
First Claim
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1. A method for making a semiconductor device comprising:

  • forming at least one metal oxide semiconductor field-effect transistor (MOSFET) on a semiconductor substrate, the at least one MOSFET comprising spaced-apart source and drain regions, a channel between the source and drain regions, the channel comprising a plurality of stacked base semiconductor monolayers and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor monolayers, and a gate overlying the channel and defining an interface therewith, the gate comprising a gate dielectric overlying the channel and a gate electrode overlying the gate dielectric;

    the at least one non-semiconductor monolayer being positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.

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