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Programmable structure including nanocrystal storage elements in a trench

  • US 20070020840A1
  • Filed: 07/25/2005
  • Published: 01/25/2007
  • Est. Priority Date: 07/25/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor fabrication process, comprising:

  • forming a trench in a semiconductor substrate;

    lining the trench with a bottom dielectric;

    forming a layer of discontinuous storage elements (DSEs) over the bottom dielectric and a top dielectric over the layer of DSEs;

    forming a conductive control gate over the top dielectric; and

    forming a source/drain region in the substrate underlying the trench.

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