Semiconductor structures formed on substrates and methods of manufacturing the same
First Claim
1. A method of transferring semiconductor structures from an initial substrate to a base substrate, the method comprising:
- providing an initial substrate with an etch stop layer;
providing a doped silicon layer on the etch stop layer;
forming semiconductor structures on the doped silicon layer;
wherein the semiconductor structures, doped silicon layer, etch stop layer, and initial substrate form a semiconductor process;
supporting the semiconductor process with a removable support structure;
removing the initial substrate using a substrate removal process that removes the initial substrate up to the etch stop layer;
removing the etch stop layer with a chemical etching process; and
depositing a substrate material on the doped silicon layer to form a base substrate.
7 Assignments
0 Petitions
Accused Products
Abstract
Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer. The process handle is removed leaving the semiconductor structures disposed on the base substrate.
-
Citations
26 Claims
-
1. A method of transferring semiconductor structures from an initial substrate to a base substrate, the method comprising:
-
providing an initial substrate with an etch stop layer;
providing a doped silicon layer on the etch stop layer;
forming semiconductor structures on the doped silicon layer;
wherein the semiconductor structures, doped silicon layer, etch stop layer, and initial substrate form a semiconductor process;
supporting the semiconductor process with a removable support structure;
removing the initial substrate using a substrate removal process that removes the initial substrate up to the etch stop layer;
removing the etch stop layer with a chemical etching process; and
depositing a substrate material on the doped silicon layer to form a base substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A method of forming semiconductor structures on a metal substrate, the method comprising:
-
providing a initial substrate with an exposed silicon dioxide etch stop layer;
bonding a hydrogen implanted doped silicon material to the silicon dioxide etch stop layer;
determining a region of the doped silicon material sufficiently weakened by the hydrogen to allow cleaving the doped silicon material along the region;
cleaving the doped silicon material along the region leaving a doped silicon layer bonded to the silicon dioxide layer;
forming semiconductor structures on the doped silicon layer;
supporting the semiconductor structures, silicon dioxide layer, and initial substrate with a supporting device;
removing the initial substrate;
removing the silicon dioxide layer; and
providing a sufficient amount of metal to the doped silicon layer to form a metal substrate. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
-
-
26-31. -31. (canceled)
Specification