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Method for manufacturing semiconductor optical device using inductive coupled plasma-enhance CVD

  • US 20070020954A1
  • Filed: 07/18/2006
  • Published: 01/25/2007
  • Est. Priority Date: 07/19/2005
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor layer diode with a semiconductor substrate, a plurality of semiconductor layers, and an electrode, the semiconductor layers including an active layer and a contact layer in uppermost thereof, the method comprising steps of:

  • (a) forming the semiconductor layers on the semiconductor substrate;

    (b) forming a mesa including the contact layer, the active layer, and a portion of the semiconductor substrate by etching;

    (c) burying the mesa with an insulating layer.; and

    (d) forming an electrode on the insulating layer, wherein the insulating layer is formed by the inductive coupling plasma enhanced chemical vapor deposition technique.

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