Semiconductor component with a low on-state resistance

• US 20070023830A1
• Filed: 05/17/2006
• Published: 02/01/2007
• Est. Priority Date: 07/27/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Pfirsch, Frank, Mauder, Anton, Willmeroth, Armin, Sedlmaier, Stefan
• Granted Patent: US 8,110,868 B2
• Time in Patent Office: Days
• US Class Current: 257/341
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4916 the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

Claims

1. (canceled)

2-41. -41. (canceled)

42. A semiconductor component having a semiconductor body comprising:

a drift zone of a first conductivity type;

a drift control zone composed of a semiconductor material which is at least partly arranged adjacent to the drift zone;

an accumulation dielectric which is arranged between the drift zone and the drift control zone; and

with a quotient of a net dopant charge in the entire volume of the drift control zone, which is adjacent to the accumulation dielectric in a direction at right angles to the accumulation dielectric, divided by the area of the accumulation dielectric being less than the breakdown charge of the semiconductor material in the drift control zone.

43. The semiconductor component according to claim 42, in which the drift control zone is of the first conductivity type.

44. The semiconductor component according to claim 42, in which the drift control zone is of a second conductivity type, which is complementary to the first conductivity type.

45. The semiconductor component according to claim 42, in which the drift control zone and the drift zone have the same net dopant concentration.

46. The semiconductor component according to claim 42, in which the drift zone and the drift control zone have the same dopant concentration profile in a direction parallel to the accumulation dielectric.

47. The semiconductor component according to claim 42, in which a first connecting zone of the first conductivity type is provided, which is more heavily doped than the drift zone and in which the drift control zone is connected to this first connecting zone.

48. The semiconductor component according to claim 47, in which the drift control zone is coupled to the first connecting zone via a second connecting zone of the first conductivity type and a first connecting electrode).

49. The semiconductor component according to claim 47, in which the first connecting zone extends in places as far as the drift control zone.

50. The semiconductor component according to claim 47, in which the drift control zone is coupled to the first connecting zone via a resistance element or a tunnel dielectric.

51. The semiconductor component according to claim 50, in which the resistance element comprises an intrinsically doped semiconductor zone.

52. The semiconductor component according to claim 47, in which the drift control zone is coupled to the first connecting zone via a diode.

80. The semiconductor component according to claim 42, which is in the form of a MOSFET and has a gate electrode which is connected to the drift control zone via an electrode.

81. The semiconductor component according to claim 42, in which the accumulation dielectric has at least two dielectric layers with different dielectric constants.

53. A semiconductor component having a semiconductor body comprising:

a drift zone of a first conductivity type;

a drift control zone composed of a semiconductor material which is at least partly arranged adjacent to the drift zone;

an accumulation dielectric which is arranged between the drift zone and the drift control zone; and

with a quotient of a net dopant charge in the entire volume of the drift control zone, which is adjacent to the accumulation dielectric in a direction at right angles to the accumulation dielectric, divided by the area of the accumulation dielectric being less than the breakdown charge of the semiconductor material in the drift control zone; and

which is in the form of a MOSFET, which has a source zone, a drain zone as the first connecting zone, a body zone which is formed between the drift zone and the source zone, as well as a gate electrode, which is isolated from the semiconductor body and is arranged adjacent to the body zone.

54. The semiconductor component according to claim 53, which is in the form of a MOSFET with a planar-arranged gate electrode.

55. The semiconductor component according to claim 53, which is in the form of a trench MOSFET, in which the gate electrode is formed in at least one trench which extends into the semiconductor body in the vertical direction.

56. The semiconductor component according to claim 55, in which the drift control zone is formed underneath the at least one trench.

57. The semiconductor component according to claim 53, in which the drift zone has at least one compensation zone with complementary doping to the drift zone.

58. The semiconductor component according to claim 57, in which the drift control zone is arranged between two adjacent compensation zones in the lateral direction.

59. The semiconductor component according to claim 57, in which an intermediate zone of the first conductivity type is arranged in the drift zone between two adjacent compensation zones, and its dopant concentration is heavier than the dopant concentration in other areas of the drift zone.

60. The semiconductor component according to claim 59, in which the drift control zone is arranged on that side of the intermediate zone which faces the heavily doped connecting zone in the vertical direction.

61. The semiconductor component according to claim 53, having a plurality of drift control zones which are spaced apart from one another at equal intervals in the lateral direction.

62. The semiconductor component according to claim 53, in which the drift control zone is arranged adjacent to the body zone in places.

63. The semiconductor component according to claim 62, in which the drift control zone is coupled to the source zone via a rectifier element or a resistance.

64. The semiconductor component according to claim 53, in which a third connecting zone is connected to the drift control zone, has complementary doping to the drift control zone and is arranged adjacent to the body zone, separated by the accumulation dielectric.

65. The semiconductor component according to claim 64, in which the third connecting zone is coupled to the source zone.

66. The semiconductor component according to claim 64, in which the third connecting zone is coupled to the source zone via a diode.

67. The semiconductor component according to claim 64, in which a semiconductor zone of the second conductivity type is provided, which is more heavily doped than the body zone, is connected to the body zone, and is arranged adjacent to the third connecting zone, at least in places.

68. The semiconductor component according to claim 62, in which a capacitance is coupled between the drift control zone and the source zone.

69. The semiconductor component according to claim 68, in which the capacitance is connected to the semiconductor component as an external capacitance.

70. The semiconductor component according to claim 68, in which the capacitance is at least partially integrated in the semiconductor body.

71. The semiconductor component according to claim 62, in which the third connecting zone is coupled to the gate electrode via a further diode.

72. The semiconductor component according to claim 62, in which a connecting zone of the second conductivity type is connected to the third connecting zone and is more heavily doped than the third connecting zone.

73. The semiconductor component according to claim 62, in which at least one of the elements comprising the first diode, the second diode and the capacitance makes contact with the more heavily doped connecting zone.

74. The semiconductor component according to claim 62, in which a dielectric layer which is thicker than the accumulation dielectric between the drift control zone and the drift zone is arranged between the body zone and the third connecting zone.

82. The semiconductor component according to claim 53, in which the drift control zone has a connecting zone, which is isolated from the gate electrode, at a source end.

75. A semiconductor component having a semiconductor body comprising:

a drift zone of a first conductivity type;

a drift control zone composed of a semiconductor material which is at least partly arranged adjacent to the drift zone;

an accumulation dielectric which is arranged between the drift zone and the drift control zone; and

with a quotient of a net dopant charge in the entire volume of the drift control zone, which is adjacent to the accumulation dielectric in a direction at right angles to the accumulation dielectric, divided by the area of the accumulation dielectric being less than the breakdown charge of the semiconductor material in the drift control zone; and

which is in the form of a Schottky diode and has a cathode zone as the first connecting zone;

in which a connecting electrode makes contact with the drift zone at a distance from the cathode zone and, together with the drift zone, forms a Schottky contact;

in which the connecting electrode makes contact with the drift control zone; and

in which the drift control zone is at a distance from the connecting electrode, or makes contact with the cathode zone via a projection.

76. The semiconductor component according to claim 75, in which the accumulation dielectric is in the form of a tunnel dielectric, in places.

77. The semiconductor component according to claim 75, which is in the form of a MOSFET and has a gate electrode, with the gate electrode having a doped semiconductor section which is connected directly to the drift control zone.

78. The semiconductor component according to claim 77, in which the semiconductor section has complementary doping to the drift control zone.

79. The semiconductor component according to claim 77, in which the doped semiconductor section is of the same conductivity type as the drift control zone.