×

Semiconductor devices having different gate dielectric layers and methods of manufacturing the same

  • US 20070023842A1
  • Filed: 05/12/2006
  • Published: 02/01/2007
  • Est. Priority Date: 11/12/2003
  • Status: Abandoned Application
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first transistor comprising a first channel region of a first conductivity type located at a first surface region of a semiconductor substrate, a first gate dielectric which includes a first HfO2 layer located over the first channel region, and a first gate located over the first gate dielectric, wherein the first gate includes a first polysilicon layer doped with an impurity of the first conductivity type; and

    a second transistor comprising a second channel region of a second conductivity type located at a second surface region of the semiconductor substrate, a second gate dielectric which includes a second HfO2 layer and an Al2O3 layer located over the second channel region, and a second gate located over the second gate dielectric, wherein the second gate includes a second polysilicon layer doped with an impurity of the second conductivity type, wherein the second conductivity type is opposite the first conductivity type.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×