Semiconductor device, power amplifier device and PC card

• US 20070023897A1
• Filed: 10/03/2006
• Published: 02/01/2007
• Est. Priority Date: 02/25/2003
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Akishige Nakajima, Eigo Tange, Hidenori Suenaga
• Inventors: Nakajima, Akishige, Tange, Eigo, Suenaga, Hidenori
• Granted Patent: US 7,312,482 B2
• Time in Patent Office: Days
• US Class Current: 257/728
• CPC Class Codes: H01L 2223/6644 Packaging aspects of high-frequency amplifiers amplifiers per se H03F
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 29/41758 for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular H01L29/41733 - H01L29/4175 take precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13063 : Metal-Semiconductor Field-Effect Transistor [MESFET]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1423 : Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19051 : Impedance matching structure [e.g. balun]
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H03F 2200/294 : the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 2200/372 : Noise reduction and elimination in amplifier
• CPC Class Codes: H03F 3/601 : using FET's, e.g. GaAs FET's H03F3/607, H03F3/608 take precedence

Abstract

The present invention is directed to improve high frequency characteristics by reducing inductance of a source. In an HEMT assembled in a power amplifier device, each of a drain electrode, a source electrode, and a gate electrode is constructed by a base portion and a plurality of fingers projected in a comb-teeth shape from the base portion, and the fingers of the electrodes mesh with each other. In the source electrode, a width of the fingers positioned at both ends of the plurality of fingers is wider than a width of each of the fingers positioned between both ends. The width of each of the fingers positioned at both ends is a width equal to or larger than a sum of the widths of the plurality of fingers positioned between both ends, and the width of the base portion is wider than that of each of the fingers positioned at both ends. An electrode pad provided for the source base portion and an external electrode terminal are connected to each other via a conductive wire.

Claims

1. A power amplifier device having one or a plurality of amplification systems,

wherein said amplification system has a semiconductor chip in which a transistor is formed and a plurality of external electrode terminals,

wherein said external electrode terminals are an input terminal to which a signal to be amplified is supplied, an output terminal for outputting the amplified signal, and first, second, and third power source terminals,

wherein said transistor is electrically connected between said input terminal and said output terminal,

wherein electrodes of said transistor are a control electrode connected to said input terminal and said third power source terminal, a first electrode connected to said output terminal and said first power source terminal, and a second electrode connected to said second power source terminal serving as an earth terminal,

wherein over a top face of said semiconductor chip, an electrode pad corresponding to said external electrode terminal and a plurality of electrode pads formed in a portion of said second electrode of said transistor are provided,

wherein a conductive wire for electrically connecting said external electrode terminal with said electrode pad corresponding to the external electrode terminal, and a conductive wire for electrically connecting the plurality of electrode pads formed in the portion of said second electrode of said transistor with said second power source terminal are provided,

wherein each of said electrodes of said transistor is constructed by a base portion and a plurality of fingers projected in a direction orthogonal to said base portion, one of the fingers of said first electrode is disposed between two neighboring fingers of said second electrode,

wherein said second electrode is connected to a fixed potential, and

wherein a width of each of said fingers positioned at both ends of said second electrode is wider than a width of each of said fingers positioned between said both ends.