Long-wavelength VCSEL system with heat sink

• US 20070025407A1
• Filed: 07/29/2005
• Published: 02/01/2007
• Est. Priority Date: 07/29/2005
• Status: Abandoned Application

• Current Assignee: Avago Technologies Fiber IP Singapore PTE Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Koelle, Bernhard
• Application Number:
  US11/192,739
• Publication Number:
  US 20070025407A1
• Time in Patent Office: Days
• US Class Current: 372/50.124
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/024 Arrangements for thermal management
• CPC Class Codes: H01S 5/02476 Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/04257 having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/34306 emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Abstract

A long-wavelength VCSEL system is provided including providing a bottom mirror, a heat sink surrounding the bottom mirror, a wafer on the bottom mirror and the heat sink, and a backside contact on the wafer on a side opposite the bottom mirror.

Claims

1. A long-wavelength VCSEL system comprising:

providing a bottom mirror;

forming a heat sink surrounding the bottom mirror;

bonding a wafer to the bottom mirror and the heat sink; and

attaching a backside contact to the wafer on a side opposite the bottom mirror.

2. The system as claimed in claim 1 wherein attaching the backside contact to the wafer on the side opposite the bottom mirror comprises providing a current flow path with limited current spreading through the heat sink to the wafer to the backside contact.

3. The system as claimed in claim 1 further comprising forming an array of long-wavelength VCSEL systems.

4. The system as claimed in claim 1 wherein providing the heat sink comprises plating a thermally conductive metal on a seed metal to form the heat sink.

5. The system as claimed in claim 1 wherein attaching the backside contact to the wafer on the side opposite the bottom mirror comprises attaching the backside contact vertically above the bottom mirror.

6. A long-wavelength VCSEL system comprising:

providing a bottom mirror;

forming a heat sink surrounding the bottom mirror, wherein the bottom mirror having a first surface and a second surface comprising;

etching the bottom mirror to a predetermined lateral dimensions;

plating a thermally conductive metal on a seed metal surrounding the bottom mirror, wherein the thermally conductive metal and the seed metal forms the heat sink; and

forming a first recess in the first surface, wherein the first recess is filled with a further thermally conductive metal;

bonding a wafer to the bottom mirror and the heat sink; and

attaching a backside contact to the wafer on a side opposite the bottom mirror.

7. The system as claimed in claim 6 further comprising providing an active layer above the bottom mirror.

8. The system as claimed in claim 6 further comprising forming a current aperture above an active layer and the bottom mirror.

9. The system as claimed in claim 6 further comprising forming a top mirror above a current aperture, an active layer, and the bottom mirror.

10. The system as claimed in claim 6 further comprising creating a thermal conductive path with the heat sink, the wafer, and the backside contact.

11. A long-wavelength VCSEL system comprising:

a bottom mirror;

a heat sink surrounding the bottom mirror;

a wafer on the bottom mirror and the heat sink; and

a backside contact on the wafer on a side opposite the bottom mirror.

12. The system as claimed in claim 11 wherein the backside contact attached to the wafer on the side opposite the bottom mirror comprises a current flow path with limited current spreading through the heat sink to the wafer to the backside contact.

13. The system as claimed in claim 11 further comprising an array of long-wavelength VCSEL systems.

14. The system as claimed in claim 11 wherein the heat sink comprises a thermally conductive metal on a seed metal to form the heat sink.

15. The system as claimed in claim 11 wherein the backside contact to the wafer opposite the bottom mirror comprises the backside contact vertically below the bottom mirror.

16. The system as claimed in claim 11 comprising:

the bottom mirror;

the heat sink surrounding the bottom mirror, wherein the bottom mirror having a first surface and a second surface comprising;

the bottom mirror has a predetermined lateral dimension;

a thermally conductive metal on a seed metal surrounding the bottom mirror, wherein the thermally conductive metal and the seed metal forms the heat sink; and

a first recess in the first surface, wherein the first recess is filled with a further thermally conductive metal;

the wafer on the bottom mirror and the heat sink; and

the backside contact on the wafer on a side opposite the bottom mirror.

17. The system as claimed in claim 11 further comprising an active layer above the bottom mirror.

18. The system as claimed in claim 11 further comprising a current aperture above an active layer and the bottom mirror.

19. The system as claimed in claim 11 further comprising a top mirror above a current aperture, an active layer, and the bottom mirror.

20. The system as claimed in claim 11 further comprising a thermal conductive path with the heat sink, the wafer, and the backside contact.