Compound semiconductor device and its manufacture
First Claim
1. A method of manufacturing a compound semiconductor device comprising the steps of:
- (a) epitaxially laminating above a substrate a channel layer consisting essentially of GaN, an electron supply layer consisting essentially of n-type AlqGal-qN (0<
q (1) and a cap layer consisting essentially of n-type GaN, in this order recited;
(b) forming a gate electrode on said cap layer, said gate electrode having a Schottky contact;
(c) etching at least part of the cap layer to form recesses on both sides of said gate electrode on source and drain sides, in such a manner that a bottom surfaces of said recesses have a roughness larger than a roughness of a surface of said cap layer under said gate electrode; and
(d) forming a source electrode and a drain electrode on the bottom surfaces of said recesses on the source and drain sides.
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Abstract
A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0<q (1) electron supply layer; an n-type GaN cap layer; a gate electrode disposed on the cap layer and forming a Schottky contact; recesses formed on both sides of the gate electrode on source and drain sides by at least partially removing the cap layer, the recesses having a bottom surface of a roughness larger than a roughness of a surface of the cap layer under the gate electrode; a source electrode disposed on the bottom surface of the recess on the source side; and a drain electrode disposed on the bottom surface of the recess on the drain side.
13 Citations
5 Claims
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1. A method of manufacturing a compound semiconductor device comprising the steps of:
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(a) epitaxially laminating above a substrate a channel layer consisting essentially of GaN, an electron supply layer consisting essentially of n-type AlqGal-qN (0<
q (1) and a cap layer consisting essentially of n-type GaN, in this order recited;
(b) forming a gate electrode on said cap layer, said gate electrode having a Schottky contact;
(c) etching at least part of the cap layer to form recesses on both sides of said gate electrode on source and drain sides, in such a manner that a bottom surfaces of said recesses have a roughness larger than a roughness of a surface of said cap layer under said gate electrode; and
(d) forming a source electrode and a drain electrode on the bottom surfaces of said recesses on the source and drain sides. - View Dependent Claims (2, 3, 4, 5)
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Specification