Method for forming a silicided gate
First Claim
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1. A method comprising:
- forming a gate layer over a semiconductor substrate;
forming a blocking layer to cover a top of the gate layer;
exposing sidewalls of the gate layer; and
siliciding the gate layer through the sidewalls of the gate layer.
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Abstract
A gate is silicided through its sides while limiting silicidation through the top of the gate. A blocking layer may be formed over the gate layer, and the sidewalls of the gate layer are exposed. A layer of metal is formed on the sidewalls of the gate and thermally treated to silicide the gate layer. The sidewalls of the gate maybe exposed through an etching process in which a silicide layer formed over the blocking layer is used as an etch mask.
15 Citations
25 Claims
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1. A method comprising:
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forming a gate layer over a semiconductor substrate;
forming a blocking layer to cover a top of the gate layer;
exposing sidewalls of the gate layer; and
siliciding the gate layer through the sidewalls of the gate layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising:
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forming a gate layer over a channel region for a transistor;
siliciding the gate layer through sidewalls of the gate layer; and
limiting silicidation through a top of the gate layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A method for forming a gate structure comprising:
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a step for forming a gate layer over a semiconductor substrate;
a step for siliciding the gate layer; and
a step for preventing siliciding at the top of the gate layer. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification