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Method of manufacturing a semiconductor device

  • US 20070026651A1
  • Filed: 07/05/2006
  • Published: 02/01/2007
  • Est. Priority Date: 07/05/2005
  • Status: Active Grant
First Claim
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1. A method of manufacturing an inchoate semiconductor device, the method comprising:

  • forming an insulating pattern having an opening partially exposing a surface of a substrate;

    forming a first silicon layer, on the insulating pattern and the exposed surface portion of the substrate, having an opened seam overlying the previously exposed portion of the substrate;

    heat treating the first silicon layer at a temperature sufficient to induce silicon migration so as to cause the opened seam to be closed; and

    forming a second silicon layer on the first silicon layer after having closed the opened seam.

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