Method of forming low resistance tungsten films
First Claim
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1. A method of forming a tungsten film, comprising:
- forming a first film having an initial surface roughness on a semiconductor substrate;
removing an upper portion of the first film to form a deposition surface having a reduced surface roughness relative to the initial surface roughness; and
forming a tungsten film on the deposition surface.
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Abstract
Provided is a method for forming low resistance metal films in which an underlying film, for example, a barrier layer or an adhesion layer, is formed on a semiconductor substrate. The underlying film is then subjected to a partial etch back in order to reduce the surface roughness and form a deposition surface. A metal film, for example, a tungsten film, is then formed on a deposition surface that has been formed on the underlying film. Forming the metal film on the deposition surface that has reduced surface roughness will tend to produce a metal film having a larger average grain size and, consequently, a lower sheet resistivity for a given film thickness.
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20 Claims
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1. A method of forming a tungsten film, comprising:
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forming a first film having an initial surface roughness on a semiconductor substrate;
removing an upper portion of the first film to form a deposition surface having a reduced surface roughness relative to the initial surface roughness; and
forming a tungsten film on the deposition surface. - View Dependent Claims (2)
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3. A method of forming a metallic wiring pattern in a semiconductor device comprising:
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forming an adhesion layer having an initial surface roughness on a semiconductor substrate;
reducing the initial surface roughness of the adhesion layer to form a deposition surface on the adhesion layer;
forming a layer of a metallic material on the deposition surface; and
removing portions of the metallic material and the adhesion layer to form the metallic wiring pattern. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a conductive wiring pattern in a semiconductor device, comprising:
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forming an insulating interlayer on a semiconductor substrate;
forming a contact hole in the insulating interlayer to expose a portion of the semiconductor substrate;
forming a barrier layer having an initial RMS surface roughness on the contact hole and the insulating interlayer;
removing an upper portion of the barrier layer to form a deposition surface having a final RMS surface roughness less than that of the initial RMS surface roughness;
forming a metal film on the deposition surface; and
removing portions of the metal film and the barrier layer to form a metal wiring pattern. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification