Dry etching process and method for manufacturing magnetic memory device
First Claim
1. A dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma.
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Abstract
Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.
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Citations
17 Claims
- 1. A dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma.
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9. A production method of a magnetic memory device having a memory portion comprising a magnetic memory element composed of a tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction, wherein
when at least a part of said magnetization fixed layer is composed of a layer including platinum and/or manganese, the layer is formed by dry etching by pulse plasma.
Specification