Electronic component for amplifying high frequency and radio communication system

• US 20070026824A1
• Filed: 10/05/2006
• Published: 02/01/2007
• Est. Priority Date: 09/05/2002
• Status: Abandoned Application

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Akamine, Hitoshi, Adachi, Tetsuaki, Ono, Seikou
• Application Number:
  US11/543,143
• Publication Number:
  US 20070026824A1
• Time in Patent Office: Days
• US Class Current: 455/127.100
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H03F 2200/429 Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
• CPC Class Codes: H03F 2203/7236 the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
• CPC Class Codes: H03F 3/24 of transmitter output stages
• CPC Class Codes: H03G 3/3047 for intermittent signals, e.g. burst signals
• CPC Class Codes: H04B 1/005 adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
• CPC Class Codes: H04B 1/0483 Transmitters with multiple parallel paths
• CPC Class Codes: H04B 1/406 with more than one transmission mode, e.g. analog and digital modes
• CPC Class Codes: H04B 2001/0408 with power amplifiers

Abstract

A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.

Claims

1-17. -17. (canceled)

18. A High frequency power module, comprising:

a first amplification means for amplifying a first modulated signal to be transmit;

a second amplification means for amplifying a second modulated signal to be transmit which is different from the first modulated signal;

a power detection means for generating a voltage related to an output power of the first amplification means or an output power the second amplification means; and

a bias means for supplying bias signals in accordance with the voltage and an output power instruction signal;

wherein the power detection means including a first detector which generates a first signal in connection with the passing current of the first amplification means, a second detector which generates a second signal in connection with the passing current of the second amplification means and a sense resistor which receives the first signal and the second signal and generates the voltage,

wherein the first detector includes a first detection transistor and a first current mirror circuit which couples the first detection transistor and supplies the first signal to the sense resistor; and

wherein the second detector includes a second detection transistor and a second current mirror circuit which couples the second detection transistor and supplies the second signal to the sense resistor.

19. A High frequency power module according to claim 18,

wherein when an output level of the first modulation signal and that of the second modulation signal are different from each other, a ratio between current in a transfer source of the first current mirror circuit and the second current mirror circuit and current on the transfer side of the first current mirror circuit and the second current mirror circuit is set so that magnitudes of currents flowing in the sense resistor become almost equal to each other in the case where either the first amplification means or the second amplification means operates at a maximum output level.

20. A High frequency power module according to claim 18,

wherein the bias means comprising a comparing circuit for comparing the voltage with the output power instruction signal.

21. A High frequency power module according to claim 19,

wherein the first amplification means comprising a plurality of amplifying stages which is connected in series and each of the plurality of amplifying stages has an amplification transistor and a bias transistor which forms a current mirror circuit,

wherein the second amplification means comprising a plurality of amplifying stages which is connected in series and each of the plurality of amplifying stages has an amplification transistor and a bias transistor which forms a current mirror circuit,

wherein the bias signals are supplied to each of the plurality of amplifying stages of the first amplification means and the second amplification means by passing a predetermined control current from the bias means to the bias transistors.

22. A High frequency power module according to claim 21,

wherein the first detection transistor receives an signal to be input to the final stage of the first amplification means,

wherein the second detection transistor receives an signal to be input to the final stage of the second amplification means.

23. A High frequency power module according to claim 22,

wherein the first modulated signal is a GSM transmission signal and the second modulated signal is a DCS transmission signal.

24. A High frequency power module according to claim 23, further comprising a switch means for switching the first amplification means and the second amplification means,

wherein the switch means is turned on when the first amplification means is operated and is turned off when the second amplification means is operated.

25. A High frequency power module according to claim 24,

wherein the switch means includes a MOSFET having high breakdown voltage.