Gas manifold valve cluster

• US 20070028838A1
• Filed: 07/31/2006
• Published: 02/08/2007
• Est. Priority Date: 07/29/2005
• Status: Abandoned Application

• Current Assignee: Aviza Technology Inc (Sumitomo Corporation)
• Original Assignee: Aviza Technology Inc (Sumitomo Corporation)
• Inventors: Chatham, Robert, Cossentine, Dan, Lo, Tommy, Bercaw, Craig, Yao, Jack, DeDontney, Jay, Bartholomew, Lawrence
• Application Number:
  US11/496,993
• Publication Number:
  US 20070028838A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/4409 characterised by sealing means
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67751 vertical transfer of a single workpiece

Abstract

The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a gas manifold valve cluster and deposition apparatus. In some embodiments of the present invention a gas manifold valve cluster and system are provided that promotes reduced length and volumes of gas lines that will be exposed to atmosphere during cleaning which minimizes the time required to perform process chamber maintenance and therefore increase the productivity of the process chamber. In other embodiments a gas manifold valve cluster and ALD deposition apparatus are provided.

Claims

1. An apparatus for processing a substrate in a process chamber, comprising:

one or more gas supply sources;

a gas manifold valve cluster proximate to the process chamber comprising a gas valve for each gas; and

a chamber lid gas supply line extending from the gas manifold valve cluster to a gas distribution device wherein the chamber lid gas supply line length and volume are minimized.

2. The apparatus of claim 1 wherein said gas manifold valve cluster is mounted on the outside of the apparatus.

3. The apparatus of claim 1 wherein said gas manifold valve cluster is coupled to said chamber lid gas supply line by a connection point comprising a seal and being adapted to detachably engage a lid of said apparatus.

4. An deposition apparatus for processing a substrate, comprising:

a process chamber housing a wafer support for holding a substrate;

a wafer transfer region where the substrate is conveyed by a transfer device through an opening in a wall of the process chamber and onto the wafer support;

a gas distribution device positioned above the substrate;

a baffle ring formed within the apparatus and encircling the wafer support and having a plurality of apertures formed therein, said baffle ring being configured to separate a reaction zone from an exhaust region;

a gas manifold valve cluster positioned proximate and outside of said process chamber and comprising a gas valve for each gas and a chamber lid gas supply line extending from said gas manifold valve cluster to the gas distribution device; and

the wafer support being movable in the vertical direction toward the gas distribution device to raise the substrate above the level of the wafer transfer region and opening in the wall of the process chamber, and said wafer support cooperates with the baffle ring to define the reaction zone having reduced volume.

5. The deposition apparatus of claim 4 wherein said gas manifold valve cluster is mounted on the outside of the apparatus.

6. The deposition apparatus of claim 4 wherein said apparatus further comprises a chamber lid assembly, and the gas manifold valve cluster is coupled to said chamber lid gas supply line by a connection point comprising a seal and being detachable from said chamber lid assembly to permit opening of said lid.

7. The deposition apparatus of claim 4 wherein the baffle ring is comprised of an upper baffle ring and a lower baffle ring, and said plurality of apertures are formed in said upper baffle ring.

8. The deposition apparatus of claim 4 further comprising:

a gas exhaust plenum communicating with said apertures in said baffle ring to exhaust gases from the reaction zone.

9. The deposition apparatus of claim 8 wherein said gas exhaust plenum encircles the substantial circumference of the baffle ring and is configured to exhaust gases from the reaction zone over substantially 360 degrees.

10. An ALD deposition apparatus for processing a wafer, comprising:

a process chamber housing a wafer support;

an injector for conveying gases to the wafer;

a baffle ring encircling the wafer support, said wafer support, injector and baffle ring defining a reaction zone where the wafer is processed, said reaction zone being isolated from a region where the wafer is moved in and out of the apparatus;

a gas manifold valve cluster positioned proximate and outside of said deposition apparatus and comprising a gas valve for each gas and a chamber lid gas supply line extending from said gas manifold valve cluster to the injector; and

a gas exhaust plenum encircling the baffle ring and in fluid communication with apertures formed in the baffle ring, said gas exhaust plenum being configured to exhaust gases from the reaction zone over substantially 360 degrees.