Method of using NF3 for removing surface deposits

• US 20070028944A1
• Filed: 08/02/2006
• Published: 02/08/2007
• Est. Priority Date: 08/02/2005
• Status: Abandoned Application

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Bai, Bo, Sawin, Herbert
• Application Number:
  US11/497,762
• Publication Number:
  US 20070028944A1
• Time in Patent Office: Days
• US Class Current: 134/1.100
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream

Abstract

The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a process chamber that is used in fabricating electronic devices. The improvement involves using an activated gas with high neutral temperature of at least about 3000 K, and addition of an oxygen source to the NF₃ cleaning gas mixture to improve the etching rate.

Claims

1. A method for removing surface deposits, said method comprising:

(a) activating in a remote chamber a gas mixture comprising an oxygen source and NF₃ using sufficient power for a sufficient time such that said gas mixture reaches a neutral temperature of at least about 3,000 K to form an activated gas mixture, and thereafter

(b) contacting said activated gas mixture with the surface deposits and thereby removing at least some of said surface deposits.

2. The method of claim 1, wherein said surface deposits is removed from the interior of a process chamber that is used in fabricating electronic devices.

3. The method of claim 1, wherein said oxygen source is oxygen gas or nitrogen oxides.

4. The method of claim 3, wherein said oxygen source is oxygen gas.

5. The method of claim 1, wherein the surface deposit is selected from a group consisting of silicon, doped silicon, silicon nitride, tungsten, silicon dioxide, silicon oxynitride, silicon carbide and various silicon oxygen compounds referred to as low K materials.

6. The method of claim 5, wherein the surface deposit is silicon nitride.

7. The method of claim 1, wherein said power is generated by a RF source, a DC source or a microwave source.

8. The method of claim 7, wherein said power is generated by a RF source.

9. The method of claim 8, wherein said activated gas mixture in the remote chamber forms a torroidal configuration and said RF power is transformer coupled inductively coupled having frequency lower than 1,000 KHz.

10. The method of claim 9, wherein at least one magnetic core is used to enhance said inductive coupling.

11. The method of claim 1, wherein the pressure in the remote chamber is between 0.1 Torr and 20 Torr.

12. The method of claim 1, wherein said gas mixture further comprises a carrier gas.

13. The method of claim 12, wherein said carrier gas is at least one gas selected from the group of gases consisting of nitrogen, argon and helium.

14. The method of claim 13, wherein said carrier gas is argon, helium or their mixture.