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Method of processing a workpiece by controlling a set of plasma parameters through a set of chamber parameters using surfaces of constant value

  • US 20070029282A1
  • Filed: 08/23/2006
  • Published: 02/08/2007
  • Est. Priority Date: 05/16/2003
  • Status: Abandoned Application
First Claim
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1. A method of processing a workpiece on a workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters of a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling the chamber parameters of source power and bias power, said method comprising:

  • a. for each one of said plural plasma parameters, fetching from a memory a relevant surface of constant value corresponding to the user-selected value of said one plasma parameter, said surface being defined in a space of which each of said chamber parameters is a dimension, and determining an intersection of the relevant surfaces, said intersection corresponding to a target value of source power and bias power; and

    b. setting said source power and bias power, respectively, to the target values.

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