Method of processing a workpiece by controlling a set of plasma parameters through a set of chamber parameters using surfaces of constant value
First Claim
1. A method of processing a workpiece on a workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters of a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling the chamber parameters of source power and bias power, said method comprising:
- a. for each one of said plural plasma parameters, fetching from a memory a relevant surface of constant value corresponding to the user-selected value of said one plasma parameter, said surface being defined in a space of which each of said chamber parameters is a dimension, and determining an intersection of the relevant surfaces, said intersection corresponding to a target value of source power and bias power; and
b. setting said source power and bias power, respectively, to the target values.
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Abstract
A workpiece is processed on a workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters of a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling the chamber parameters of source power and bias power. The method includes the following steps: (a.) for each one of the plural plasma parameters, fetching from a memory a relevant surface of constant value corresponding to the user-selected value of the one plasma parameter, the surface being defined in a space of which each of the chamber parameters is a dimension, and determining an intersection of the relevant surfaces, the intersection corresponding to a target value of source power and bias power; and (b.) setting the source power and bias power, respectively, to the target values. In preparation for the foregoing steps, a set of surfaces of constant value for each of the plasma parameters is stored in the memory, the set of surfaces corresponding to a set of constant values spanning a predetermined value range of the corresponding plasma parameter.
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Citations
12 Claims
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1. A method of processing a workpiece on a workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters of a group comprising ion density, wafer voltage, etch rate, wafer current, by controlling the chamber parameters of source power and bias power, said method comprising:
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a. for each one of said plural plasma parameters, fetching from a memory a relevant surface of constant value corresponding to the user-selected value of said one plasma parameter, said surface being defined in a space of which each of said chamber parameters is a dimension, and determining an intersection of the relevant surfaces, said intersection corresponding to a target value of source power and bias power; and
b. setting said source power and bias power, respectively, to the target values. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification