Interconnected high speed electron tunneling devices
First Claim
1. An optoelectronic device, comprising:
- a formation of integrated layers, said integrated layers being configured so as to define at least one integrated electronic component; and
an electron tunneling device that is configured for electrical communication with said integrated electrical component, said electron tunneling device including first and second non-insulating layers in a spaced apart, confronting relationship with one another so that a voltage difference can be supported therebetween, an arrangement supported between the first and second non-insulating layers including at least one layer for producing electron tunneling between and to said first and second non-insulating layers, and an antenna structure that is formed in electrical communication with said first and second non-insulating layers as part of said tunneling device for providing an external communication with the electron tunneling device.
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Accused Products
Abstract
An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron tunneling device, which includes first and second non-insulating layers spaced apart from one another such that a given voltage can be provided thereacross. The integrated electron tunneling device further includes an arrangement disposed between the first and second non-insulating layers and serving as a transport of electrons between and to the first and second non-insulating layers. The arrangement includes at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling. The integrated electron tunneling device further includes an antenna structure connected with the first and second non-insulating layers, and the integrated electron tunneling device is electrically connected with the integrated electronic component.
78 Citations
14 Claims
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1. An optoelectronic device, comprising:
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a formation of integrated layers, said integrated layers being configured so as to define at least one integrated electronic component; and
an electron tunneling device that is configured for electrical communication with said integrated electrical component, said electron tunneling device including first and second non-insulating layers in a spaced apart, confronting relationship with one another so that a voltage difference can be supported therebetween, an arrangement supported between the first and second non-insulating layers including at least one layer for producing electron tunneling between and to said first and second non-insulating layers, and an antenna structure that is formed in electrical communication with said first and second non-insulating layers as part of said tunneling device for providing an external communication with the electron tunneling device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An optoelectronic device, comprising:
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a formation of integrated layers, said integrated layers being configured so as to define at least one integrated electronic component; and
an electron tunneling device that is (i) supported directly by at least a portion of the formation of integrated layers, (ii) configured for an electrical communication with said integrated electrical component to provide an interaction therewith, and (iii) configured for an external optical communication in cooperation with said interaction.
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Specification