Omni-directional reflector and light emitting diode adopting the same

• US 20070029561A1
• Filed: 11/14/2005
• Published: 02/08/2007
• Est. Priority Date: 08/03/2005
• Status: Abandoned Application

• Current Assignee: Rensselaer Polytechnic Institute, Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Rensselaer Polytechnic Institute, Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Schubert, E. Fred, Kim, Jong-kyu, Cho, Jae-hee, Park, Yong-jo, Sone, Cheol-soo, Xi, Jing-qun
• Application Number:
  US11/271,970
• Publication Number:
  US 20070029561A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal.

Claims

1. An omni-directional reflector comprising:

a transparent conductive low-index layer formed of conductive nanorods; and

a reflective layer formed of a metal.

2. The omni-directional reflector of claim 1, wherein the conductive nanorods are formed of one of a transparent conducting oxide and a transparent conducting nitride.

3. The omni-directional reflector of claim 2, wherein the transparent conducting nitride comprises at least one of Ti and N.

4. The omni-directional reflector of claim 3, wherein the transparent conducting nitride is formed of one of TiN, TiON, and InSnON.

5. The omni-directional reflector of claim 2, wherein the transparent conducting oxide is formed of one of In, Sn, and Zn oxides.

6. The omni-directional reflector of claim 5, wherein the transparent conducting oxide comprises a dopant.

7. The omni-directional reflector of claim 6, wherein the dopant is one of Ga, Cd, Mg, Be, Ag, Mo, V, Cu, lr, Rh, Ru, W, Co, Ni, Mn, Pd, Pt, and La.

8. The omni-directional reflector of claim 1, wherein the transparent conducting oxide is formed of one of In, Sn, and Zn oxides and comprises one of Ga, Cd, Mg, Be, Ag, Mo, V, Cu, Ir, Rh, Ru, W, Co, Ni, Mn, Pd, Pt, and La as a dopant.

9. The omni-directional reflector of claim 1, wherein the thickness of the transparent conductive low-index layer is proportional to a ¼

n of the peak wavelength of light.

10. The omni-directional reflector of claim 9, wherein the reflective layer is formed of one of Ag, Ag₂O, Al, Zn, Ti, Rh, Mg, Pd, Ru, Pt, and Ir.

11. The omni-directional reflector of claim 9, wherein the conductive nanorods are formed using one of sputter and e-beam oblique angle deposition.

12. The omni-directional reflector of claim 1, wherein the conductive nanorodes are formed using one of sputter and e-beam oblique angle deposition.

13. A light emitting diode comprising:

a light emitting region comprising an active layer and upper and lower carrier confinement semiconductor layers;

a transparent conductive low-index layer comprising a plurality of conductive nanorods formed on one of the upper and lower semiconductor layers of the light emitting region; and

a metal reflective layer formed on the transparent conductive low-index layer.

14. The light emitting diode of claim 13, wherein the plurality of conductive nanorods are formed of one of a transparent conducting oxide and a transparent conducting nitride.

15. The light emitting diode of claim 14, wherein the transparent conducting nitride comprises at least one of Ti and N.

16. The light emitting diode of claim 13, wherein the transparent conducting nitride is formed of one of TiN, TiON, and InSnON.

17. The light emitting diode of claim 14, wherein the transparent conducting oxide is formed of one of In, Sn, and Zn oxides.

18. The light emitting diode of claim 17, wherein the transparent conducting oxide comprises a dopant.

19. The light emitting diode of claim 18, wherein the dopant is one of Ga, Cd, Mg, Be, Ag, Mo, V, Cu, Ir, Rh, Ru, W, Co, Ni, Mn, Pd, Pt, and La.

20. The light emitting diode of claim 13, wherein the transparent conducting oxide is formed of one of In, Sn, and Zn oxides and comprises one of Ga, Cd, Mg, Be, Ag, Mo, V, Cu, Ir, Rh, Ru, W, Co, Ni, Mn, Pd, Pt, and La as a dopant.

21. The light emitting diode of claim 13, wherein the thickness of the transparent conductive low-index layer is proportional to a ¼

n of peak wavelength of the light.

22. The light emitting diode of claim 21, wherein the metal reflective layer is formed of one of Ag, Ag2O, Al, Zn, Ti, Rh, Mg, Pd, Ru, Pt, and Ir.

23. The light emitting diode of claim 21, wherein the conductive nanorodes are formed using one of sputter and e-beam oblique angle deposition.

24. The light emitting diode of any one of claim 13, wherein the conductive nanorodes are formed using one of sputter and e-beam oblique angle deposition.