Semiconductor image sensor and method for fabricating the same
First Claim
Patent Images
1. A semiconductor image sensor, which is connected with an external device when the sensor is used, the sensor comprising:
- a semiconductor imaging element including an imaging area for detecting light, a peripheral circuit area, and an electrode area in which electrode terminals are formed;
a transparent resin layer formed on a circuit-formation surface of the semiconductor imaging element; and
cylindrical electrodes formed on the electrode terminals, having an upper surface existing in the same plane as an upper surface of the transparent resin layer, and provided for connection with the external device.
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Abstract
A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.
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Citations
12 Claims
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1. A semiconductor image sensor, which is connected with an external device when the sensor is used, the sensor comprising:
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a semiconductor imaging element including an imaging area for detecting light, a peripheral circuit area, and an electrode area in which electrode terminals are formed;
a transparent resin layer formed on a circuit-formation surface of the semiconductor imaging element; and
cylindrical electrodes formed on the electrode terminals, having an upper surface existing in the same plane as an upper surface of the transparent resin layer, and provided for connection with the external device. - View Dependent Claims (2, 3)
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4. A semiconductor image sensor, comprising:
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a semiconductor imaging element including an imaging area for detecting light, a peripheral circuit area, and an electrode area in which electrode terminals are formed; and
a transparent sheet bonded at least to the imaging area with a transparent adhesive member interposed therebetween. - View Dependent Claims (5, 6, 7, 8)
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9. A method for fabricating a semiconductor image sensor, comprising the steps of:
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(a) forming cylindrical electrodes on a semiconductor imaging element array, in which a plurality of semiconductor imaging elements each including electrode terminals are formed, the cylindrical electrodes being formed on the electrode terminals;
(b) forming a transparent resin layer having a thickness that allows at least the cylindrical electrodes to be buried in the transparent resin layer;
(c) polishing the transparent resin layer so that an upper surface of each cylindrical electrode and an upper surface of the transparent resin layer are of the same height; and
(d) dicing the semiconductor imaging element array into individual pieces, in each of which one of the semiconductor imaging elements is formed. - View Dependent Claims (10)
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11. A method for fabricating a semiconductor image sensor, comprising the steps of:
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(a) bonding a transparent sheet array having grooves formed therein to a circuit-formation surface of a semiconductor imaging element array, in which a plurality of semiconductor imaging elements each including electrode terminals are formed, in such a manner that the electrode terminals are located inside the grooves, the grooves being formed in portions in the transparent sheet array that correspond to regions in which the electrode terminals are formed;
(b) polishing the transparent sheet array until the bottom of each groove is reached, thereby forming a transparent sheet on each of the semiconductor imaging elements; and
(c) dicing the semiconductor imaging element array into individual pieces, in each of which one of the semiconductor imaging elements is formed. - View Dependent Claims (12)
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Specification