Semiconductor pressure sensor

• US 20070029657A1
• Filed: 11/28/2005
• Published: 02/08/2007
• Est. Priority Date: 08/02/2005
• Status: Active Grant

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Nakamura, Hiroshi, Taruya, Masaaki, Asada, Shinsuke, Takahata, Yoshimitsu
• Granted Patent: US 7,391,101 B2
• Time in Patent Office: Days
• US Class Current: 257/680
• CPC Class Codes: G01L 19/0084 to the outside of the housing other details about the housing see G01L19/14
• CPC Class Codes: G01L 19/141 Monolithic housings, e.g. molded or one-piece housings
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: H01L 2224/32188 the layer connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/057 the leads being parallel to the base
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/181 Encapsulation

Abstract

A semiconductor pressure sensor can reduce the damage of bonding wires to increase their life time even under an environment in which the temperature and pressure change rapidly and radically. The semiconductor pressure sensor includes a package (1) made of a resin and having a concave portion (1a), a lead (2) formed integral with the package (1) by insert molding, with its one end exposed into the concave portion (1a) and its other end extended from the package (1) to the outside, a sensor chip (3) arranged in the concave portion (1a) for detecting pressure, and a bonding wire (4) electrically connecting the sensor chip (3) and the lead (2) with each other. An interface between the lead (2) and the package (1) on the side of the concave portion (1a) is covered with a first protective resin portion (6) of electrically insulating property, and the bonding wire (4) is covered with a second protective resin portion (7) that is softer than the first protective resin portion (6).

Claims

1. A semiconductor pressure sensor comprising:

a package made of a resin and having a concave portion;

a lead formed integral with said package by insert molding, with its one end exposed into said concave portion and its other end extended from said package to the outside;

a semiconductor chip arranged in said concave portion; and

a bonding wire electrically connecting said semiconductor chip and said lead with each other;

wherein an interface between said lead and said package on the side of said concave portion is covered with a first protective resin portion of electrically insulating property; and

said bonding wire is covered with a second protective resin portion that is softer than said first protective resin portion.

2. The semiconductor pressure sensor as set forth in claim 1, wherein said semiconductor chip is bonded to a bottom of said concave portion through said first protective resin portion.

3. The semiconductor pressure sensor as set forth in claim 1, wherein said lead is provided at its one end with a bonding pad that is formed by being bent in its immediate portion toward said second protective resin portion in a stepwise fashion.

4. The semiconductor pressure sensor as set forth in claim 1, wherein said semiconductor chip is a sensor chip for detecting pressure.

5. The semiconductor pressure sensor as set forth in claim 1, wherein said semiconductor chip is a processor chip that serves to correct and amplify an electric signal from a sensor chip for detecting pressure.

6. The semiconductor pressure sensor as set forth in claim 4, wherein said sensor chip and said processing chip are arranged in said same concave portion.