×

Gated nanorod field emitter structures and associated methods of fabrication

  • US 20070029911A1
  • Filed: 07/19/2005
  • Published: 02/08/2007
  • Est. Priority Date: 07/19/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method comprising the steps of:

  • a) providing a thin film material comprising;

    i) a substrate;

    ii) a dielectric layer on the substrate; and

    iii) a conductive film on the dielectric layer;

    b) lithographically-patterning a patternable material deposited onto the conductive film so as to selectively remove portions of this material;

    c) selectively etching the conductive film and dielectric layer in regions where the patternable has been removed so as to form microcavities;

    d) depositing Al inside the microcavities to form Al mesas;

    e) anodizing the Al mesas to form localized nanoporous AAO templates; and

    f) electrochemically-depositing nanorods in the nanopores of the AAO templates to yield at least one gated nanorod field emission device.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×