Electro-optical device and electronic apparatus

• US 20070030434A1
• Filed: 07/25/2006
• Published: 02/08/2007
• Est. Priority Date: 08/02/2005
• Status: Active Grant

• Current Assignee: Japan Display West Incorporated (Japan Display Incorporated)
• Original Assignee: Sanyo Epson Imaging Devices Corporation (Seiko Group)
• Inventors: Sato, Takashi, Hirabayashi, Yukiya
• Granted Patent: US 8,334,959 B2
• Time in Patent Office: Days
• US Class Current: 349/149
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: G02F 2202/103 a-Si
• CPC Class Codes: G02F 2202/22 Antistatic materials or arrangements
• CPC Class Codes: G09G 2330/04 Display protection
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52

Abstract

An electro-optical device having a display region in which a plurality of pixels are arranged in a matrix includes: switching elements each corresponding to one the plurality of pixels; a first sealed wiring portion that is formed on an element substrate so as to surround at least three sides of the display region; and a second sealed wiring portion that surrounds the first sealed wiring portion.

Claims

1. An electro-optical device having a display region in which a plurality of pixels are arranged in a matrix, comprising:

switching elements each corresponding to one of the plurality of pixels;

a first sealed wiring portion that is formed on an element substrate so as to surround at least three sides of the display region; and

a second sealed wiring portion that surrounds the first sealed wiring portion.

2. The electro-optical device according to claim 1,

wherein at least one of the first and second sealed wiring portions is formed in a rectangular shape surrounding the display region.

3. The electro-optical device according to claim 2,

wherein the first and second sealed wiring portions are electrically connected to a common electrode that is formed to correspond to the plurality of pixels.

4. The electro-optical device according to claim 1, further comprising:

a common electrode wiring line that is formed on the element substrate so as to be electrically connected to the common electrode formed to correspond to the plurality of pixels,

wherein the common electrode wiring line forms a third sealed wiring portion that surrounds at least three sides of the display region.

5. The electro-optical device according to claim 1,

wherein each of the switching elements includes a thin film transistor having a gate electrode formed on the element substrate, a semiconductor layer opposite to the gate electrode with a gate insulating layer interposed therebetween, and a source electrode and a drain electrode which are electrically connected to the semiconductor layer, and

any one of the first and second sealed wiring portions is formed on the same layer as the source electrode and the drain electrode by using the same material as the source electrode and the drain electrode.

6. The electro-optical device according to claim 5,

wherein any one of the first and second sealed wiring portions is formed on the same layer as the gate electrode by using the same material as the gate electrode.

7. The electro-optical device according to claim 5, further comprising:

pixel electrodes each of which is electrically connected to the corresponding switching elements through the source electrode and the drain electrode,

wherein any one of the first and second sealed wiring portions is formed on the same layer as the pixel electrodes by using the same material as the pixel electrodes.

8. The electro-optical device according to claim 1, further comprising:

pixel electrodes each of which is electrically connected to the corresponding switching elements through the source electrode and the drain electrode,

wherein at least two of the first and second sealed wiring portions and a third sealed wiring portion surrounding at least three sides of the display region are electrically connected to each other by a connecting member that is formed on the same layer as the pixel electrodes by using the same material as the pixel electrodes.

9. The electro-optical device according to claim 1, further comprising:

a plurality of data lines formed on the element substrate; and

a plurality of scanning lines formed on the element substrate so as to intersect the plurality of data lines,

wherein the pixels are respectively formed to correspond to intersections of the data lines and the scanning lines, and

the first sealed wiring portion or the second sealed wiring portion is electrically connected to the scanning lines or the data lines through at least one electrostatic protection circuit.

10. The electro-optical device according to claim 9,

wherein the electrostatic protection circuit includes a MOS diode having a semiconductor layer that is formed on the same layer as thin film transistors which form the switching elements.

11. The electro-optical device according to claim 10,

wherein the electrostatic protection circuit is formed by connecting a first MOS diode and a second MOS diode in opposite directions, each of the first and second MOS diodes being formed by making a gate electrode and a drain electrode of the corresponding thin film transistors short-circuited.

12. The electro-optical device according to claim 11,

wherein the first MOS diode is a capacitance-coupled MOS diode in which a source electrode and a gate electrode overlap each other in plan view, and

the second MOS diode is a capacitance-coupled MOS diode in which a source electrode and a gate electrode partially overlap each other in plan view.

13. The electro-optical device according to claim 12,

wherein the capacitance-coupled MOS diode is electrically connected to the corresponding sealed wiring portion formed on the same layer as the data lines.

14. An electronic apparatus comprising the electro-optical device according to claim 1.