System and method for determining maximum operational parameters used in maskless applications

• US 20070030472A1
• Filed: 10/13/2006
• Published: 02/08/2007
• Est. Priority Date: 12/28/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hoeks, Martinus
• Granted Patent: US 7,791,710 B2
• Time in Patent Office: Days
• US Class Current: 355/77
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70508 Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

Abstract

A lithographic method and apparatus for determining operational parameters of a maskless lithography tool. In an embodiment, an amount of data in a datapath of the maskless lithography system is reduced. A maximum value of at least one operational parameter of the maskless lithography system is determined responsive to the reduced amount of data in the datapath.

Claims

1. A method for determining operational parameters of a maskless lithography system, comprising:

reducing an amount of data in a datapath of the maskless lithography system; and

determining a maximum value of at least one operational parameter of the maskless lithography system responsive to the reduced amount of data in the datapath.

2. The method of claim 1, wherein the determining comprises:

determining a maximum frequency of an illumination source included in the maskless lithography system responsive to the reduced amount of data in the datapath.

3. The method of claim 1, wherein the determining comprises:

determining a maximum scan speed of a pattern generator included in the maskless lithography system responsive to the reduced amount of data in the datapath.

4. The method of claim 1, wherein the determining comprises:

determining a maximum stage speed of a stage included in the maskless lithography system responsive to the reduced amount of data in the datapath.

5. The method of claim 1, wherein the determining comprises:

determining a maximum frequency of an illumination source, a maximum scan speed of a pattern generator, and a maximum stage speed of a stage included in the maskless lithography system responsive to the reduced amount of data in the datapath.

6. A system for determining operational parameters of a maskless lithography tool, comprising:

a converter that converts an image data set to a pattern data set; and

a compressor that compresses the pattern data set and calculates a maximum value of at least one operational parameter of the maskless lithography tool responsive to the compressed pattern data set.

7. The system of claim 6, wherein the maximum value of the at least one operational parameter of the maskless lithography tool comprises a maximum frequency of an illumination source.

8. The system of claim 6, wherein the maximum value of the at least one operational parameter of the maskless lithography tool comprises a maximum scan speed of a pattern generator.

9. The system of claim 6, wherein the maximum value of the at least one operational parameter of the maskless lithography tool comprises a maximum stage speed of a stage.

10. The system of claim 6, wherein the maximum value of the at least one operational parameter of the maskless lithography tool comprises a maximum frequency of an illumination source, a maximum scan speed of a pattern generator, and a maximum stage speed of a stage.

11. A method for determining operational parameters of a maskless lithography system, comprising:

analyzing data in a datapath of the maskless lithography system before an exposure operation; and

determining a maximum value of at least one operational parameter of the maskless lithography system to be used during the exposure operation responsive to the analyzed data.

12. The method of claim 11, wherein the maximum value of the at least one operational parameter of the maskless lithography tool comprises a maximum frequency of an illumination source.

13. The method of claim 11, wherein the maximum value of the at least one operational parameter of the maskless lithography tool comprises a maximum scan speed of a pattern generator.

14. The method of claim 11, wherein the maximum value of the at least one operational parameter of the maskless lithography tool comprises a maximum stage speed of a stage.

15. The method of claim 11, wherein the maximum value of the at least one operational parameter of the maskless lithography tool comprises a maximum frequency of an illumination source, a maximum scan speed of a pattern generator, and a maximum stage speed of a stage.