Method for depositing silicon-containing films

• US 20070031598A1
• Filed: 07/07/2006
• Published: 02/08/2007
• Est. Priority Date: 07/08/2005
• Status: Abandoned Application

• Current Assignee: Avid Technology Incorporated
• Original Assignee: Avid Technology Incorporated
• Inventors: Treichel, Helmuth, Okuyama, Yoshikazu, Owyang, Jon
• Application Number:
  US11/482,782
• Publication Number:
  US 20070031598A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45546 specially adapted for a substrate stack in the ALD reactor
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 16/4584 the substrate being rotated

Abstract

Methods for forming silicon containing films using silylamine moieties are disclosed. In some embodiments, silylamine moieties are employed to deposit silicon-nitrogen, silicon-oxygen, or silicon-nitrogen-oxygen materials at temperatures of less than 550° C. In some embodiments methods are practiced within process chambers adapted to contain a single substrate as well as within process chambers adapted to contain a plurality of substrates, where the silylamine moieties are conveyed to the chambers in across flow type manner.

Claims

1. A method of forming a silicon containing film on the surface of one or more substrates, characterized in that:

a silylamine moiety and one or more reactant precursors are reacted in a process chamber by flowing the silylamine moiety and the one or more reactant precursors across a top surface of the one or more substrates to form a film thereon.

2. The method of claim 1 wherein the method is carried out at a deposition temperature of less than 550°

C.

3. The method of claim 1 wherein said silylamine moiety is comprised of the formula:

H_mN(SiH₃)_n

where n is an integer from 1 to 3 and m is equal to 3−

n.

4. The method of claim 1 wherein said silylamine moiety is comprised of the formula:

H_mN(Si₂H₅)_n

where n is an integer from 1 to 3 and m is equal to 3−

n.

5. The method of claim 1 wherein a silicon oxide film is formed on the surface of the substrate and the method is carried out a deposition temperature in the range of approximately 150-550°

C.

6. The method of claim 1 wherein a silicon nitride film is formed on the surface of the substrate and the method is carried out a deposition temperature in the range of approximately 300-800°

C.,

7. The method of claim 6 wherein the deposition temperature is in the range of approximately 500-520°

C.

8. The method of claim 1 where the silylamine moiety and precursors are flowed into the process chamber concurrently.

9. The method of claim 1 where the silylamine moiety and precursors are flowed into the process chamber sequentially.

10. A method of forming a silicon containing film on one or more substrates in a process chamber comprising:

conveying to the process chamber, either sequentially or concurrently, a precursor comprising a silylamine moiety and at least one reactant containing nitrogen to form a silicon-nitrogen film on the surface of one or more substrates.

11. The method of claim 10 wherein the process chamber is configured to contain a single substrate.

12. The method of claim 10 wherein the process chamber is configured to contain a plurality of substrates.

13. The method of claim 10 wherein:

the method is performed at a temperature in the range of approximately 300 to 800°

C.;

at a pressure between 0.01 mTorr and 760 Torr; and

using total precursor flow rates between 0 and 20,000 sccm.

14. The method of claim 10 wherein said silylamine moiety is comprised of the formula:

H_mN(SiH₃)_n

where n is an integer from 1 to 3 and m is equal to 3−

n.

15. The method of claim 10 wherein said silylamine moiety is comprised of the formula:

H_mN(Si₂H₅)_n

where n is an integer from 1 to 3 and m is equal to 3−

n.

16. The method of claim 10 wherein the silylamine moiety and the at least one reactant precursor, are flowed concurrently and across a top surface of the one or more substrates to form a film thereon.

17. The method of claim 10 wherein the deposition temperature is in the range of approximately 500-550°

C.

18. A method of forming a silicon containing film on one or more substrates in a process chamber comprising:

conveying to a process chamber, either sequentially or concurrently, a precursor comprising a silylamine moiety and at least one reactant containing oxygen to form a silicon-oxygen film on the one or more substrates.

19. The method of claim 18 wherein the process chamber is configured to contain a single substrate.

20. The method of claim 18 wherein the process chamber is configured to contain a plurality of substrates.

21. The method of claim 18 wherein:

the method is performed at a temperature of less than 550°

C.;

at a pressure between 0.01 mTorr and 760 Torr; and

using total precursor flow rates between 0 and 20,000 sccm.

22. The method of claim 18 wherein said silylamine moiety is comprised of the formula:

H_mN(SiH₃)_n

where n is an integer from 1 to 3 and m is equal to 3−

n.

23. The method of claim 18 wherein said silylamine moiety is comprised of the formula:

H_mN(Si₂H₅)_n

where n is an integer from 1 to 3 and m is equal to 3−

n.

24. The method of claim 18 wherein the silylamine moiety and the at least one reactant, are flowed concurrently and across a top surface of the one or more substrates to form a film thereon.

25. The method of claim 18 wherein the method is carried out at a deposition temperature in the range of approximately 150-550°

C.

26. A method of forming a film on one or more substrates in a process chamber comprising:

conveying a first precursor comprising a silylamine moiety to the process chamber sequence to form a first layer on the substrate;

conveying a second reactant containing both nitrogen and oxygen to react with the first layer to form a silicon-nitrogen-oxygen film; and

repeating the above steps until the desired thickness of the silicon-nitrogen-oxygen film is formed.

27. The method of claim 26 wherein the process chamber is configured to contain a single substrate.

28. The method of claim 26 wherein the process chamber is configured to contain a plurality of substrates.

29. The method of claim 26 wherein:

the method is performed at a temperature of less than 550°

C.;

at a pressure between 0.01 mTorr and 760 Torr; and

using total precursor flow rates between 0 and 20,000 sccm.

30. A method comprising:

conveying, either sequentially or concurrently, a first precursor comprising a silylamine moiety to the process chamber a second reactant containing nitrogen and a third reactant containing oxygen to form a silicon-nitrogen-oxygen film.

31. The method of claim 30 wherein the process chamber is configured to contain a single substrate.

32. The method of claim 30 wherein the process chamber is configured to contain a plurality of substrates.

33. The method of claim 30 wherein:

the method is performed at a temperature of less than 550°

C.;

at a pressure between 0.01 mTorr and 760 Torr; and

using total precursor flow rates between 0 and 20,000 sccm.

34. The method of claim 30 where the silylamine moiety, the second reactant containing nitrogen and the third reactant containing oxygen are conveyed concurrently and flow across a top surface of the one or more substrates to form a film thereon.