Use of dissolved hafnium alkoxides or zirconium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers or zirconium oxide and zirconium oxynitride layers
First Claim
1. The use of a solution of one or more hafnium alkoxides or zirconium alkoxides as a precursor for hafnium oxide and hafnium oxynitride layers or for zirconium oxide and zirconium oxynitride layers, a 30-90% strength by weight solution of one or more hafnium alkoxides being used as precursor for hafnium oxide and hafnium oxynitride layers or a 30-90% strength by weight solution of one or more zirconium alkoxides being used as a precursor for zirconium oxide and zirconium oxynitride layers.
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Abstract
The present invention relates to the use of a highly concentrated solution of one or more hafnium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers. The present invention relates in particular to the use of a 30 to 90% strength by weight solution of one or more hafnium alkoxides for producing hafnium oxide and hafnium oxynitride layers for CVD or ALD methods. In addition, the invention relates to a process for the production of a hafnium oxide and hafnium oxynitride layer on an article to be coated, and a hafnium alkoxide solution which contains 30 to 90% by weight of one or more hafnium alkoxides. In a further embodiment of the invention, hafnium is replaced by zirconium in said compounds.
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Citations
22 Claims
- 1. The use of a solution of one or more hafnium alkoxides or zirconium alkoxides as a precursor for hafnium oxide and hafnium oxynitride layers or for zirconium oxide and zirconium oxynitride layers, a 30-90% strength by weight solution of one or more hafnium alkoxides being used as precursor for hafnium oxide and hafnium oxynitride layers or a 30-90% strength by weight solution of one or more zirconium alkoxides being used as a precursor for zirconium oxide and zirconium oxynitride layers.
- 21. A hafnium alkoxide solution which contains 30-90% by weight of one or more hafnium alkoxides, the hafnium alkoxides being selected from hafnium methoxide, hafnium n-propoxide, hafnium isopropoxide and/or hafnium ethoxide, or a zirconium alkoxide solution which contains 30-90% by weight of one or more zirconium alkoxides, the zirconium alkoxides being selected from zirconium methoxide, zirconium n-propoxide, zirconium isopropoxide and/or zirconium ethoxide.
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