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Use of dissolved hafnium alkoxides or zirconium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers or zirconium oxide and zirconium oxynitride layers

  • US 20070031599A1
  • Filed: 07/26/2006
  • Published: 02/08/2007
  • Est. Priority Date: 02/03/2004
  • Status: Abandoned Application
First Claim
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1. The use of a solution of one or more hafnium alkoxides or zirconium alkoxides as a precursor for hafnium oxide and hafnium oxynitride layers or for zirconium oxide and zirconium oxynitride layers, a 30-90% strength by weight solution of one or more hafnium alkoxides being used as precursor for hafnium oxide and hafnium oxynitride layers or a 30-90% strength by weight solution of one or more zirconium alkoxides being used as a precursor for zirconium oxide and zirconium oxynitride layers.

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